參數(shù)資料
型號(hào)： MTD12N06EZL
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 369A-13, DPAK-3
文件頁數(shù)： 4/10頁
文件大?。?/td> 231K
代理商： MTD12N06EZL
MTD12N06EZL
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
VGS = 10 V
8 V
7 V
6 V
5 V
24
18
12
6
0
0.5
0
2
VDS ≥ 10 V
TJ = 55°C
100°C
25°C
VGS = 5 V
0.15
6
0
0.13
0.05
12
18
24
TJ = 100°C
25°C
55°C
TJ = 25°C
0.096
0.08
0
VGS = 10 V
15 V
VGS = 5 V
ID = 12 A
1.8
1.4
1
0.4
0
50
25
0
25
50
75
100
125
150
VGS = 0 V
TJ = 125°C
100
1
0
1020
30405060
1
1.5
2
3
24
18
12
6
0
2.5
0.11
0.09
0.07
0.092
0.088
0.084
612
18
24
10
100°C
25°C
2.5
4 V
3
3.5
4
4.5
5
5.5
6
1.6
1.2
0.8
0.6
0.2
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