參數(shù)資料
型號: MTD10N10EL
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: 10 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 4/10頁
文件大?。?/td> 252K
代理商: MTD10N10EL
MTD10N10EL
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
DI
,DRAIN
CURRENT
(AMPS)
10
5
0
2
5
3
1
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
VGS = 10 V
7 V
3.5 V
4 V
5 V
TJ = 25°C
DI
,DRAIN
CURRENT
(AMPS)
5
0
1
2
3
4
5
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
VDS ≥ 5 V
–55
°C
TJ = 100°C
4
15
20
4.5 V
25
°C
15
20
3 V
2 V
10
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
TJ = 25°C
VGS = 5 V
10 V
0.25
0.2
5
10
20
15
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0.35
0.25
0.15
0.05
0
5
10
ID, DRAIN CURRENT (AMPS)
VGS = 10 V
TJ = 25°C
100
°C
–55
°C
0.15
0.1
0
15
20
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I DSS
,LEAKAGE
(nA)
VGS = 0 V
0
40
60
1
100
20
100
TJ = 125°C
10
100
°C
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
VGS = 5 V
ID = 5 A
– 50
0
50
100
150
125
– 25
25
75
2
1.5
1
0.5
0
80
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