- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369933 > MTB9N25E (MOTOROLA INC) TMOS POWER FET 9.0 AMPERES 250 VOLTS PDF資料下載
參數(shù)資料
| 型號： | MTB9N25E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 9.0 AMPERES 250 VOLTS |
| 中文描述： | 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 258K |
| 代理商： | MTB9N25E |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
0
2
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
4
6
8
10
9
15
18
ID
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
TJ = 25
°
C
VDS
≥
10 V
TJ = –55
°
C
100
°
C
6
12
3
5 V
6 V
7 V
VGS = 10 V
9 V
2
3
4
5
6
7
0
9
15
18
6
12
3
0
25
°
C
8 V
12
8
R
R
0
3
6
9
12
15
0
0.2
0.4
0.8
1.2
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
TJ = 100
°
C
25
°
C
–55
°
C
TJ = 25
°
C
VGS = 10 V
1.0
0.6
18
0.3
0.4
0.5
0.6
0
3
6
9
12
15
18
15 V
VGS = 10 V
R
(
–50
0
0.5
1.0
1.5
2.0
0
100
200
1
10
100
TJ, JUNCTION TEMPERATURE (
°
C)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I
–25
0
25
50
75
100
125
150
VGS = 0 V
50
150
250
TJ = 125
°
C
25
°
C
100
°
C
VGS = 10 V
ID = 4.5 A
2.5
1000
0.1
相關PDF資料 |
PDF描述 |
|---|---|
| MTD2955V | TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM |
| MTD2955V | P-Channel Enhancement Mode Field Effect Transistor |
| MTD2N50 | POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE DPAK FOR SURFACE MOUNT OR INSERTION MOUNT |
| MTD6N20E | TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 0.7 OHM |
| MTD6P10E | TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MTB9N25ET4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTBA5N10J3 | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:N -Channel Logic Level Enhancement Mode Power MOSFET |
| MTBA5N10Q8 | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:N -Channel Logic Level Enhancement Mode Power MOSFET |
| MTBB0P10J3 | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:P-Channel Logic Level Enhancement Mode Power MOSFET |
| MTBB0P10L3 | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:P-Channel Logic Level Enhancement Mode Power MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復。