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參數(shù)資料
| 型號： | MTB8N50ET4 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 162K |
| 代理商： | MTB8N50ET4 |
MTB8N50E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
100
°C
25
°C
TJ = –55°C
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–to–Source Leakage Current
versus Voltage
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
I DSS
,LEAKAGE
(nA)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
16
12
8.0
4.0
10
8.0
6.0
4.0
2.0
0
16
12
8.0
4.0
2.0
2.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
0.8
0.6
0.4
0.2
0
14
10
6.0
2.0
0
0.60
0
4.0
8.0
12
16
2.5
1.5
0.5
0
150
100
50
0
–50
TJ = 25°C
7 V
6 V
5 V
I D
,DRAIN
CURRENT
(AMPS)
VGS = 10 V
0
4.0
8.0
12
16
2.0
6.0
10
14
0
100
300
500
200
400
0
2.0
1.0
100,000
1,000
10
1.0
10,000
100
14
12
8 V
I D
,DRAIN
CURRENT
(AMPS)
0.55
0.70
0.65
0.75
0.85
0.80
TJ = 25°C
VGS = 10 V
15 V
1.6
1.2
1.0
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
VGS = 10 V
TJ = 100°C
25
°C
–55
°C
125
75
25
–25
VGS = 10 V
ID = 8 A
VGS = 0 V
TJ = 125°C
25
°C
100
°C
VDS ≥ 10 V
3.0
3.5
14
10
6.0
2.0
1.4
0.90
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