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參數(shù)資料
| 型號： | MTB8N50ET4 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 162K |
| 代理商： | MTB8N50ET4 |
MTB8N50E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
500
—
500
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 500 Vdc, VGS = 0 Vdc)
(VDS = 400 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
10
100
mAdc
Gate–Body Leakage Current
(VGS = ±20 Vdc, VDS = 0 Vdc)
IGSS
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
—
3.0
6.3
4.0
—
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 4.0 Adc)
RDS(on)
—
0.6
0.8
Ohms
Drain–to–Source On–Voltage (VGS = 10 Vdc)
(ID = 8.0 Adc)
(ID = 4.0 Adc, TJ = 125°C)
VDS(on)
—
7.2
6.4
Vdc
Forward Transconductance
(VDS = 15 Vdc, ID = 4.0 Adc)
gFS
4.0
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vdc V
0 Vdc
Ciss
—
1450
1680
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
190
264
Transfer Capacitance
f = 1.0 MHz)
Crss
—
45.4
144
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(R
9 1
W)
td(on)
—
15
50
ns
Rise Time
(RGon =91 W)
tr
—
33
72
Turn–Off Delay Time
(RGon = 9.1 W)
td(off)
—
40
150
Fall Time
tf
—
32
60
Gate Charge
(see Figure 8)
(V
400 Vd
I
8 0 Ad
QT
—
40
64
nC
(see Figure 8)
(VDS = 400 Vdc, ID = 8.0 Adc,
Q1
—
8.0
—
( DS
, D
,
VGS = 10 Vdc)
Q2
—
17
—
Q3
—
17.3
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
VSD
Vdc
(IS = 8.0 Adc, VGS = 0 Vdc)
—
1.2
2.0
(IS = 8.0 Adc, VGS = 0 Vdc, TJ = 125°C)
—
1.1
—
Reverse Recovery Time
(I
8 0 Ad
V
0 Vd
trr
—
320
—
ns
(IS = 8.0 Adc, VGS = 0 Vdc,
ta
—
179
—
( S
,
GS
,
dIS/dt = 100 A/ms)
tb
—
141
—
Reverse Recovery Stored Charge
QRR
—
3.0
—
mC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
—
7.5
—
(1) Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2.0%.
(2) Switching characteristics are independent of operating junction temperature.
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