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參數(shù)資料
| 型號(hào)： | MTB75N05HD |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 50 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-03, D2PAK-3 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 240K |
| 代理商： | MTB75N05HD |
MTB75N05HD
http://onsemi.com
6
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous draintosource voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance
General Data and Its Use.”
Switching between the offstate and the onstate may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded, and that the
transition time (tr, tf) does not exceed 10 μs. In addition the
total power averaged over a complete switching cycle must
not exceed (TJ(MAX) TC)/(RθJC).
A power MOSFET designated EFET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and must be adjusted for operating
conditions differing from those specified. Although industry
practice is to rate in terms of energy, avalanche energy
capability is not a constant. The energy rating decreases
nonlinearly with an increase of peak current in avalanche
and peak junction temperature.
Although many EFETs can withstand the stress of
draintosource avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous ID can safely be
assumed to equal the values indicated.
0
50
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAINT
OSOURCE
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
0.1
1
100
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
1
10
100
1000
AV
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
25
50
75
100
125
10
VGS = 20 V
SINGLE PULSE
TC = 25°C
500
300
200
100
ID = 75 A
400
100 μs
dc
175
150
450
350
250
150
1 ms
10 ms
10 μs
t, TIME (s)
Figure 14. Thermal Response
0.1
1
0.01
1.0E05
1.0E+01
r(t)
,EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANC
E
(NORMALIZED)
RθJC(t) = r(t) RθJC
RθJC = 1.0°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2
0.05
0.02
0.01
0.1
1.0E04
1.0E03
1.0E02
1.0E01
1.0E+00
D = 0.5
SINGLE PULSE
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