參數(shù)資料
型號： MTB75N05HD
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： 75 A, 50 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 418B-03, D2PAK-3
文件頁數(shù)： 1/8頁
文件大?。?/td> 240K
代理商： MTB75N05HD
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 7
1
Publication Order Number:
MTB75N05HD/D
MTB75N05HD
Preferred Device
Power MOSFET
75 Amps, 50 Volts
NChannel D2PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a draintosource diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
w These devices are available in Pbfree package(s). Specifications herein
apply to both standard and Pbfree devices. Please see our website at
www.onsemi.com for specific Pbfree orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
50
Volts
DraintoGate Voltage (RGS = 1.0 MΩ)
VDGR
50
GatetoSource Voltage Continuous
VGS
± 20
Drain Current Continuous
Drain Current Continuous @ 100°C
Drain Current Single Pulse (tp ≤ 10 μs)
ID
IDM
75
65
225
Amps
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TA = 25°C
(minimum footprint, FR4 board)
PD
125
1.0
2.5
Watts
W/°C
Watts
Operating and Storage Temperature
Range
TJ, Tstg
55 to
150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 V, VGS = 10 V, Peak
IL = 75 A, L = 0.177 mH, RG = 25 Ω)
EAS
500
mJ
Thermal Resistance
Junction to Case
Junction to Ambient
Junction to Ambient (minimum foot-
print, FR4 board)
RθJC
RθJA
1.0
62.5
50
°C/W
Maximum Temperature for Soldering
Purposes, 1/8″ from case for 10 s
TL
260
°C
MTB75N05HD
YWW
MARKING DIAGRAM
& PIN ASSIGNMENT
MARKING DIAGRAM
& PIN ASSIGNMENT
1
Gate
4
Drain
2
Drain
3
Source
75 AMPERES
50 VOLTS
RDS(on) = 9.5 mΩ
Device
Package
Shipping
ORDERING INFORMATION
MTB75N05HD
D2PAK
50 Units/Rail
D2PAK
CASE 418B
STYLE 2
1
2
3
4
http://onsemi.com
NChannel
D
S
G
MTB75N05HD = Device Code
Y
= Year
WW
= Work Week
MTB75N05HDT4
D2PAK
800/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
相關(guān)PDF資料
PDF描述
MTB75N05HDT4 75 A, 50 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET
MTB8N50ET4 8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
MTB8N50E 8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
MTB8N50ET4 8 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
MTB9N25ET4 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MTB75N05HDT4 功能描述:MOSFET N-CH 50V 75A D2PAK-3 RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
MTB75N06 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 75 AMPERES 60 VOLTS
MTB75N06HD 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 75A 3-Pin(2+Tab) D2PAK Rail
MTB7671 制造商:Megger 功能描述:METER TEST BOX
MTB-7PL80 制造商:ITT Interconnect Solutions 功能描述:MTB-7PL80 / 095262-0006 / MICRO
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