- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369933 > MTB50N06VL (MOTOROLA INC) TMOS POWER FET 42 AMPERES 60 VOLTS PDF資料下載
參數(shù)資料
| 型號(hào)： | MTB50N06VL |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 42 AMPERES 60 VOLTS |
| 中文描述： | 42 A, 60 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 97K |
| 代理商： | MTB50N06VL |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 V, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
60
—
—
64
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0)
(VDS = 60 Vdc, VGS = 0, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
15 Vdc, VDS = 0)
IDSS
—
—
—
—
10
100
μ
Adc
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (Negative)
VGS(th)
1.0
—
—
4.78
2.0
—
Vdc
mV/
°
C
Static Drain–Source On–Resistance
(VGS = 5.0 Vdc, ID = 25 Adc)
(VGS = 4.0 Vdc, ID = 25 Adc)
RDS(on)
—
—
—
—
0.028
0.039
Ohm
Drain–Source On–Voltage (VGS = 5.0 Vdc)
(ID = 50 Adc)
(ID = 25 Adc, TJ = 125
°
C)
VDS(on)
—
—
—
—
1.68
1.40
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 25 Adc)
gFS
17
—
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
3100
4340
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0,
—
1065
1491
Reverse Transfer Capacitance
—
260
520
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
RG = 9.1
)
td(on)
tr
td(off)
tf
QT
Q1
Q2
—
21
42
ns
Rise Time
(VDD = 25 Vdc, ID = 50 Adc,
VGS = 5.0 Vdc,
—
365
730
Turn–Off Delay Time
—
55
110
Fall Time
—
150
300
Gate Charge
VGS = 5.0 Vdc)
—
52
73
nC
(VDS = 48 Vdc, ID = 50 Adc,
—
13
—
—
34
—
Q3
—
27
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 50 Adc, VGS = 0)
(IS = 50 Adc, VGS = 0, TJ =
°
C)
VSD
—
—
1.52
1.1
2.5
—
Vdc
Reverse Recovery Time
(IS = 50 Adc, VGS = 0 ,
dIS/dt = 100 A/
μ
s)
trr
—
200
—
ns
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the tab to center of die)
Ld
—
3.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.1
″
from package to source bond pad)
Ls
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTB50N06V | TMOS POWER FET 42 AMPERES 60 VOLTS |
| MTB52N06VL | TMOS POWER FET 52 AMPERES 60 VOLTS |
| MTB52N06V | TMOS POWER FET 52 AMPERES 60 VOLTS |
| MTB60N06HD | TMOS POWER FET 60 AMPERES 60 VOLTS |
| MTB60N06 | TMOS POWER FET 60 AMPERES 60 VOLTS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTB50N06VLT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 42A 3-Pin(2+Tab) D2PAK T/R |
| MTB50N06VT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 42A 3-Pin(2+Tab) D2PAK T/R |
| MTB50P03HDL | 功能描述:MOSFET 30V 50A Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTB50P03HDLG | 功能描述:MOSFET PFET 30V 50A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTB50P03HDLT4 | 功能描述:MOSFET 30V 50A Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。