參數(shù)資料
型號: MTB2P50E
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Power MOSFET 2 Amps, 500 Volts(2A, 500V功率MOSFET)
中文描述: 2 A, 500 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: CASE 418B-04, D2PAK-3
文件頁數(shù): 3/8頁
文件大?。?/td> 85K
代理商: MTB2P50E
MTB2P50E
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
0
4
8
28
0
1
2
3
4
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
ID
2
3
4
5
6
7
0
1
2
3
4
ID
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
1
2
2.5
3.5
4
0
2
6
10
0
1
2
3
4
4
4.5
5
5.5
6
I
D
, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
I
D
, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
0.5
1
1.5
2
R
1
10
100
1000
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 5. OnResistance Variation with
Temperature
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
,
R
,
(
I
T
J
= 25
°
C
V
DS
10 V
T
J
= 55
°
C
25
°
C
100
°
C
T
J
= 100
°
C
T
J
= 25
°
C
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 10 V
I
D
= 1 A
12
16
6 V
5 V
3.5
2.5
1.5
0.5
2.5
3.5
4.5
5.5
6.5
4
8
3
1.5
0.5
25
°
C
55
°
C
V
GS
= 10 V
15 V
50
25
0
25
50
75
100
125
150
0
100
50
150
200
250
500
300
350
400
450
T
J
= 125
°
C
100
°
C
25
°
C
0.5
1.5
2.5
3.5
3.5
2.5
1.5
0.5
20
24
4 V
8 V
7 V
5.75
5.25
4.75
4.25
R
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