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參數(shù)資料
| 型號： | MTB23P06VT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 23 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-03, D2PAK-3 |
| 文件頁數(shù)： | 7/10頁 |
| 文件大小： | 257K |
| 代理商： | MTB23P06VT4 |
MTB23P06V
http://onsemi.com
6
SAFE OPERATING AREA
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
Figure 13. Thermal Response
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
0
0.5
1
1.5
2.0
2.5
3
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
Figure 15. D2PAK Power Derating Curve
RθJA = 50°C/W
Board material = 0.065 mil FR4
Mounted on the minimum recommended footprint
Collector/Drain Pad Size ≈ 450 mils x 350 mils
175
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAINT
OSOURCE
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
A
V
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
25
50
75
100
125
ID = 23 A
150
0
700
600
500
800
0.1
100
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
VGS = 20 V
SINGLE PULSE
TC = 25°C
1
10
100
0.1
dc
100
μs
1 ms
10 ms
400
300
200
100
175
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
t, TIME (s)
1.00
0.10
0.01
0.2
D = 0.5
0.05
0.01
SINGLE PULSE
0.1
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
1.0E+00
1.0E+01
0.02
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|---|---|
| MTB23P06V | 23 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET |
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| MTB2N60ET4 | 2 A, 600 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
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