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參數(shù)資料
| 型號(hào)： | MTB23P06VT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 23 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-03, D2PAK-3 |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大小： | 257K |
| 代理商： | MTB23P06VT4 |
MTB23P06V
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
02
4
6
8
10
0
10
20
30
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
30
35
23
4
8
0
5
10
15
40
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
5
10
15
20
25
0.14
0.02
0.04
0.06
0.12
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
5
10
15
20
30
0.08
0.085
0.09
0.095
0.11
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
50
0
0.2
0.4
0.6
1.8
010
20
30
40
1
50
10
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 125°C
15 V
25
0
25
50
75
100
150
TJ = 25°C
VDS ≥ 10 V
TJ = 55°C
25
°C
100°C
TJ = 100°C
25
°C
55
°C
TJ = 25°C
VGS = 0 V
VGS = 10V
VGS = 10 V
ID = 11.5 A
40
50
7 V
6 V
5 V
4 V
8 V
9 V
20
25
56
7
0.08
0.1
30
0.1
0.105
25
0.8
1
1.2
1.4
1.6
125
60
0.16
35
40
45
35
40
45
50
0.115
0.12
175
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PDF描述 |
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| MTB23P06V | 23 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET |
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| MTB2N60ET4 | 2 A, 600 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB2N60ET4 | 2 A, 600 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB2P50ET4 | 2 A, 500 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET |
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