- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄96090 > MTB23P06VT4 (ON SEMICONDUCTOR) 23 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MTB23P06VT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 23 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-03, D2PAK-3 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 257K |
| 代理商： | MTB23P06VT4 |
MTB23P06V
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
60.5
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
10
100
μAdc
GateBody Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
2.8
5.3
4.0
Vdc
mV/°C
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 11.5 Adc)
RDS(on)
0.093
0.12
Ohm
DrainSource OnVoltage
(VGS = 10 Vdc, ID = 23 Adc)
(VGS = 10 Vdc, ID = 11.5 Adc, TJ = 150°C)
VDS(on)
2.1
3.3
3.2
Vdc
Forward Transconductance
(VDS = 10.9 Vdc, ID = 11.5 Adc)
gFS
5.0
11.5
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
1160
1620
pF
Output Capacitance
Coss
380
530
Transfer Capacitance
Crss
105
210
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
(VDD = 30 Vdc, ID = 23 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
td(on)
13.8
30
ns
Rise Time
tr
98.3
200
TurnOff Delay Time
td(off)
41
80
Fall Time
tf
62
120
Gate Charge
(See Figure 8)
(VDS = 48 Vdc, ID = 23 Adc,
VGS = 10 Vdc)
QT
38
50
nC
Q1
7.0
Q2
18
Q3
14
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 23 Adc, VGS = 0 Vdc)
(IS = 23 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
2.2
1.8
3.5
Vdc
Reverse Recovery Time
(IS = 23 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
trr
142
ns
ta
100
tb
41
Reverse Recovery Stored
Charge
QRR
0.804
μC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
LD
3.5
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
7.5
nH
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTB23P06V | 23 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET |
| MTB2N40ET4 | 2 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB2N60ET4 | 2 A, 600 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB2N60ET4 | 2 A, 600 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB2P50ET4 | 2 A, 500 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTB2-3PH001 | 制造商:ITT Interconnect Solutions 功能描述:MTB2-3PH001 - Bulk |
| MTB2-3PH016 | 制造商:ITT Interconnect Solutions 功能描述:Cable Assembly Pre-Wired Pigtail 0.152m 26AWG 3 POS Micro Strip PIN Crimp |
| MTB2-3PS | 制造商:ITT Interconnect Solutions 功能描述:Conn Unshrouded Header PIN 3 POS 2.54mm Solder Cup ST Cable Mount |
| MTB2-3SAL1 | 制造商:ITT Interconnect Solutions 功能描述:Conn Socket Strip SKT 3 POS 2.54mm Solder RA Thru-Hole |
| MTB2-3SL1 | 制造商:ITT Interconnect Solutions 功能描述:MTB2-3SL1 - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。