參數(shù)資料
型號: MTB23P06V
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: 23 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: CASE 418B-03, D2PAK-3
文件頁數(shù): 4/10頁
文件大?。?/td> 257K
代理商: MTB23P06V
MTB23P06V
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
02
4
6
8
10
0
10
20
30
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
30
35
23
4
8
0
5
10
15
40
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
5
10
15
20
25
0.14
0.02
0.04
0.06
0.12
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
0
5
10
15
20
30
0.08
0.085
0.09
0.095
0.11
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
50
0
0.2
0.4
0.6
1.8
010
20
30
40
1
50
10
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 125°C
15 V
25
0
25
50
75
100
150
TJ = 25°C
VDS ≥ 10 V
TJ = 55°C
25
°C
100°C
TJ = 100°C
25
°C
55
°C
TJ = 25°C
VGS = 0 V
VGS = 10V
VGS = 10 V
ID = 11.5 A
40
50
7 V
6 V
5 V
4 V
8 V
9 V
20
25
56
7
0.08
0.1
30
0.1
0.105
25
0.8
1
1.2
1.4
1.6
125
60
0.16
35
40
45
35
40
45
50
0.115
0.12
175
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