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參數(shù)資料
| 型號： | MTB23P06V |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 23 A, 60 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-03, D2PAK-3 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 257K |
| 代理商： | MTB23P06V |
MTB23P06V
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
60.5
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
10
100
μAdc
GateBody Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
2.8
5.3
4.0
Vdc
mV/°C
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 11.5 Adc)
RDS(on)
0.093
0.12
Ohm
DrainSource OnVoltage
(VGS = 10 Vdc, ID = 23 Adc)
(VGS = 10 Vdc, ID = 11.5 Adc, TJ = 150°C)
VDS(on)
2.1
3.3
3.2
Vdc
Forward Transconductance
(VDS = 10.9 Vdc, ID = 11.5 Adc)
gFS
5.0
11.5
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
1160
1620
pF
Output Capacitance
Coss
380
530
Transfer Capacitance
Crss
105
210
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
(VDD = 30 Vdc, ID = 23 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
td(on)
13.8
30
ns
Rise Time
tr
98.3
200
TurnOff Delay Time
td(off)
41
80
Fall Time
tf
62
120
Gate Charge
(See Figure 8)
(VDS = 48 Vdc, ID = 23 Adc,
VGS = 10 Vdc)
QT
38
50
nC
Q1
7.0
Q2
18
Q3
14
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 23 Adc, VGS = 0 Vdc)
(IS = 23 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
2.2
1.8
3.5
Vdc
Reverse Recovery Time
(IS = 23 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
trr
142
ns
ta
100
tb
41
Reverse Recovery Stored
Charge
QRR
0.804
μC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
LD
3.5
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
7.5
nH
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MTB23P06VT4 | 功能描述:MOSFET P-CH 60V 23A D2PAK RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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