- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384755 > MT8LSDT3264AI (Micron Technology, Inc.) SYNCHRONOUS DRAM MODULE PDF資料下載
參數(shù)資料
| 型號： | MT8LSDT3264AI |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | SYNCHRONOUS DRAM MODULE |
| 中文描述： | 同步DRAM模塊 |
| 文件頁數(shù)： | 16/24頁 |
| 文件大?。?/td> | 614K |
| 代理商： | MT8LSDT3264AI |
256MB / 512MB (x64)
168-PIN SDRAM DIMMs
32,64 Meg x 64 SDRAM DIMMs
SD8_16C32_64x64AG_C.fm - Rev. C 11/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
16
2002, Micron Technology Inc.
.
Table 17: AC Functional Characteristics
Notes: 5, 6, 7, 8, 9, 11; notes appear on page 17
PARAMETER
SYMBOL
-13E
-133
-10E
UNITS
NOTES
READ/WRITE command to READ/WRITE command
t
CCD
t
CKED
t
PED
t
DQD
t
DQM
t
DQZ
t
DWD
t
DAL
t
DPL
t
BDL
t
CDL
t
RDL
t
MRD
1
1
1
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
t
CK
17
CKE to clock disable or power-down entry mode
1
1
1
14
CKE to clock enable or power-down exit setup mode
1
1
1
14
DQM to input data delay
0
0
0
17
DQM to data mask during WRITEs
0
0
0
17
DQMto data high-impedance during READs
2
2
2
17
WRITE command to input data delay
0
0
0
17
Data-into ACTIVE command
4
5
4
15, 21
Data-into PRECHARGE command
2
2
2
16, 21
Last data-in to burst STOP command
1
1
1
17
Last data-in to new READ/WRITE command
1
1
1
17
Lastdata-into PRECHARGE command
2
2
2
16, 21
LOADMODEREGISTER command to ACTIVE or REFRESH
command
Data-out to high-impedance from PRECHARGE
command
2
2
2
26
CL = 3
t
ROH(3)
t
ROH(2)
3
3
3
t
CK
t
CK
17
CL = 2
2
2
2
17
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MT16LSDT6464AG-10E | SYNCHRONOUS DRAM MODULE |
| MT16LSDT6464AG-133 | SYNCHRONOUS DRAM MODULE |
| MT16LSDT6464AG-13E | SYNCHRONOUS DRAM MODULE |
| MT16LSDT6464AI | SYNCHRONOUS DRAM MODULE |
| MT28F016S5VG-9 | 2 MEG x 8 SMART 5 EVEN-SECTORED FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT8LSDT3264AI-133D2 | 制造商:Micron Technology Inc 功能描述:256MB 32MX64 SYNCH DRAM MODULE IND TEMP DIMM 3.3V NON BUF - Trays |
| MT8LSDT3264AY-133D2 | 功能描述:MODULE SDRAM 256MB 168DIMM RoHS:是 類別:存儲卡，模塊 >> 存儲器 - 模塊 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點:- 封裝/外殼:168-DIMM |
| MT8LSDT3264AY-133G1 | 功能描述:MODULE SDRAM 256MB 168UDIMM RoHS:是 類別:存儲卡，模塊 >> 存儲器 - 模塊 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點:- 封裝/外殼:168-DIMM |
| MT8LSDT3264AY13ED2 | 制造商:Micron Technology Inc 功能描述: |
| MT8LSDT3264AY-13ED2 | 功能描述:MODULE SDRAM 256MB 168DIMM RoHS:是 類別:存儲卡，模塊 >> 存儲器 - 模塊 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點:- 封裝/外殼:168-DIMM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。