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參數資料
| 型號： | MT16LSDT6464AG-10E |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | SYNCHRONOUS DRAM MODULE |
| 中文描述： | 同步DRAM模塊 |
| 文件頁數： | 1/24頁 |
| 文件大?。?/td> | 614K |
| 代理商： | MT16LSDT6464AG-10E |
32,64 Meg x 64 SDRAM DIMMs
SD8_16C32_64x64AG_C.fm - Rev. C 11/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1
2002, Micron Technology Inc.
256MB / 512MB (x64)
168-PIN SDRAM DIMMs
SYNCHRONOUS
DRAM MODULE
MT8LSDT3264A(I) - 256MB
MT16LSDT6464A(I) - 512MB
For the latest data sheet, please refer to the Micron Web
site:
Features PC100- and PC133-compliant
JEDEC-standard 168-pin, dual in-line memory
module (DIMM)
Unbuffered
256MB (32 Meg x 64), 512MB (64 Meg x 64)
Single +3.3V ±0.3V power supply
Fully synchronous; all signals registered on positive
edge of system clock
Internal pipelined operation; column address can
be changed every clock cycle
Internal SDRAM banks for hiding row access/precharge
Programmable burst lengths: 1, 2, 4, 8, or full page
Auto Precharge, including Concurrent Auto
Precharge, and Auto Refresh Modes
64ms, 8,192 cycle Auto Refresh cycle
Self Refresh Mode
LVTTL-compatible inputs and outputs
Serial Presence-Detect (SPD)
Figure 1: 168-Pin DIMM (MO–161)
OPTIONS
Package
Unbuffered
168-pin DIMM (gold)
Operating Temperature Range
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
1
Memory Clock/CAS Latency
(133 MHz)/CL = 2
(133 MHz)/CL = 3
(100 MHz)/CL = 2
MARKING
A
G
None
I
NOTE:
1. Consult Micron for availability; Industrial Tempera-
ture Option available in -133 speed only.
-13E
-133
-10E
Table 1:
Address Table
256MB
MODULE
8K
4 (BA0, BA1)
32 Meg x 8
8K (A0–A12)
1K (A0–A9)
1 (S0,S2)
512MB
MODULE
8K
4 (BA0, BA1)
32 Meg x 8
8K (A0–A12)
1K (A0–A9)
2 (S0,S2; S1,S3)
Refresh Count
Device Banks
Device Configuration
Row Addressing
Column Addressing
Module Banks
Table 2:
Timing parameters
MODULE
MARKINGS
PC100
CL -
t
RCD -
t
RP
PC133
CL -
t
RCD -
t
RP
-13E
-133
-10E
2 - 2 - 2
2 - 2 - 2
2 - 2 - 2
2 - 2 - 2
3 - 3 - 3
NA
Table 3:
Part Numbers
PARTNUMBER
1
NOTE:
1. The designators for component and PCB revision
are the last two characters of each part number.
Consult factory for current revision codes. Example:
MT8LSDT3264AG-133B1.
CONFIGURATION
SYSTEM
BUS SPEED
MT8LSDT3264AG-13E_
MT8LSDT3264AG(I)-133_
MT8LSDT3264AG-10E_
MT16LSDT6464AG-13E_
MT16LSDT6464AG(I)-133_
MT16LSDT6464AG-10E_
32 Meg x 64
32 Meg x 64
32 Meg x 64
64 Meg x 64
64 Meg x 64
64 Meg x 64
133 MHz
133 MHz
100 MHz
133 MHz
133 MHz
100 MHz
Standard
Low Profile
相關PDF資料 |
PDF描述 |
|---|---|
| MT16LSDT6464AG-133 | SYNCHRONOUS DRAM MODULE |
| MT16LSDT6464AG-13E | SYNCHRONOUS DRAM MODULE |
| MT16LSDT6464AI | SYNCHRONOUS DRAM MODULE |
| MT28F016S5VG-9 | 2 MEG x 8 SMART 5 EVEN-SECTORED FLASH MEMORY |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MT16LSDT6464AG-10EB2 | 制造商:Micron Technology Inc 功能描述:DRAM MOD SDRAM 4GBIT 168UDIMM - Trays |
| MT16LSDT6464AG-10EC2 | 制造商:Micron Technology Inc 功能描述:DRAM MOD SDRAM 4GBIT 168UDIMM - Trays |
| MT16LSDT6464AG-133 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:SYNCHRONOUS DRAM MODULE |
| MT16LSDT6464AG-133B2 | 制造商:Micron Technology Inc 功能描述:DRAM MOD SDRAM 4GBIT 168UDIMM - Trays |
| MT16LSDT6464AG-133C2 | 制造商:Micron Technology Inc 功能描述:DRAM Module SDRAM 512MByte 168UDIMM Tray 制造商:Micron Technology Inc 功能描述:DRAM MOD SDRAM 4GBIT 168UDIMM - Trays |
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