參數(shù)資料
型號(hào)： MT58L32L36P
廠商： Micron Technology, Inc.
英文描述： 32K x 36, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V輸入/輸出，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲(chǔ)器)
中文描述： 32K的× 36，3.3V的I / O的流水線，SCD的SyncBurst的SRAM（1兆，3.3V的輸入/輸出，流水線式，單循環(huán)取消選擇，同步脈沖靜態(tài)存儲(chǔ)器）
文件頁(yè)數(shù)： 10/17頁(yè)
文件大?。?/td> 329K
代理商： MT58L32L36P
1Mb: 64K x 18, 32K x 32/36 3.3V I/O, Pipelined, SCD SyncBurst SRAM
MT58L64L18P.p65 – Rev. 9/99
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1999, Micron Technology, Inc.
10
1Mb: 64K x 18, 32K x 32/36
3.3V I/O, PIPELINED, SCD SYNCBURST SRAM
I
DD
OPERATING CONDITIONS AND MAXIMUM LIMITS
(0oC
≤
T
A
≤
+70oC; V
DD
, V
DD
Q = +3.3V +0.3V/-0.165V unless otherwise noted)
DESCRIPTION
Power Supply
Current:
Operating
Power Supply
Current: Idle
CONDITIONS
SYMBOL
TYP
-6
-7.5
-10
UNITS NOTES
Device selected; All inputs
≤
V
IL
or
V
IH
; Cycle time
t
KC MIN;
V
DD
= MAX; Outputs open
Device selected; V
DD
= MAX;
ADSC#, ADSP#, GW#, BWx#, ADV#
V
IH
; All inputs
≤
V
SS
+ 0.2 or
V
DD
- 0.2;
Cycle time
t
KC MIN
Device deselected; V
DD
= MAX;
All inputs
≤
V
SS
+ 0.2 or
V
DD
- 0.2;
All inputs static; CLK frequency = 0
Device deselected; V
DD
= MAX;
All inputs
≤
V
IL
or
V
IH
;
All inputs static; CLK frequency = 0
Device deselected; V
DD
= MAX;
ADSC#, ADSP#, GW#, BWx#, ADV#
V
IH
; All inputs
≤
V
SS
+ 0.2 or
V
DD
- 0.2;
Cycle time
t
KC MIN
I
DD
100
340
280
225
mA
1, 2, 3
I
DD
1
30
85
70
65
mA
1, 2, 3
CMOS Standby
I
SB
2
0.5
10
10
10
mA
2, 3
TTL Standby
I
SB
3
6
25
25
25
mA
2, 3
Clock Running
I
SB
4
30
85
70
65
mA
2, 3
NOTE:
1. I
DD
is specified with no output current and increases with faster cycle times. I
DD
Q increases with faster cycle times and
greater output loading.
2. “ Device deselected” means device is in power-down mode as defined in the truth table. “ Device selected” means
device is active (not in power-down mode).
3. Typical values are measured at 3.3V, 25oC and 10ns cycle time.
4. This parameter is sampled.
CAPACITANCE
DESCRIPTION
Control Input Capacitance
Input/Output Capacitance (DQ)
Address Capacitance
Clock Capacitance
CONDITIONS
T
A
= 25oC; f = 1 MHz;
V
DD
= 3.3V
SYMBOL
C
I
C
O
C
A
C
CK
TYP
2.7
4
2.5
2.5
MAX
3.5
5
3.5
3.5
UNITS
pF
pF
pF
pF
NOTES
4
4
4
4
TQFP THERMAL RESISTANCE
DESCRIPTION
Thermal Resistance
(Junction to Ambient)
CONDITIONS
SYMBOL
θ
JA
TYP
40
UNITS NOTES
oC/W
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA/JESD51.
4
Thermal Resistance
(Junction to Top of Case)
θ
JC
8
oC/W
4
MAX
相關(guān)PDF資料
PDF描述
MT6V16M16 512K x 16 x 32 banks RDRAM(512K x 16 x 32組 同步動(dòng)態(tài)RAM)
MT6V16M18 512K x 18 x 32 banks RDRAM(512K x 18 x 32組 同步動(dòng)態(tài)RAM)
MT9LD272AG 2Meg x 72 Nonbuffered DRAM DIMMs(2M x 72無(wú)緩沖動(dòng)態(tài)RAM雙列直插存儲(chǔ)器模塊)
MT9LD272 2Meg x 72 Buffered DRAM DIMMs(2M x 72緩沖動(dòng)態(tài)RAM模塊（雙列直插存儲(chǔ)器模塊）)
MT9VDDT1672A DDR SDRAM DIMM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT58L32L36PT-10 TR 制造商:Cypress Semiconductor 功能描述:32KX36 SRAM PLASTIC TQFP 3.3V
MT58L512L18D 制造商:MICRON 制造商全稱:Micron Technology 功能描述:8Mb: 512K x 18, 256K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM
MT58L512L18DT-7.5 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述:
MT58L512L18F 制造商:MICRON 制造商全稱:Micron Technology 功能描述:8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM
MT58L512L18FF-10 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述:
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*