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參數(shù)資料
| 型號： | MT58L32L32D |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 32K x 32,3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V輸入/輸出，流水線式，雙循環(huán)取消選擇，同步脈沖靜態(tài)存儲(chǔ)器) |
| 中文描述： | 32KX8的32,3.3六/ O的流水線，雙氰胺SyncBurst的SRAM（1兆，3.3V的輸入/輸出，流水線式，雙循環(huán)取消選擇，同步脈沖靜態(tài)存儲(chǔ)器） |
| 文件頁數(shù)： | 16/17頁 |
| 文件大小： | 326K |
| 代理商： | MT58L32L32D |
1Mb: 64K x 18, 32K x 32/36 3.3V I/O, Pipelined, DCD SyncBurst SRAM
MT58L64L18D.p65 – Rev. 9/99
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1999, Micron Technology, Inc.
16
1Mb: 64K x 18, 32K x 32/36
3.3V I/O, PIPELINED, DCD SYNCBURST SRAM
READ/WRITE TIMING
tKC
tKL
CLK
ADSP#
tADSH
tADSS
ADDRESS
tKH
OE#
ADSC#
CE#
(NOTE 2)
tAH
tAS
A2
tCEH
tCES
BWE#,
BWa#-BWd#
(NOTE 4)
Q
High-Z
ADV#
Single WRITE
D(A3)
A4
A5
A6
D(A5)
D(A6)
D
BURST READ
Back-to-Back READs
(NOTE 5)
High-Z
Q(A2)
Q(A1)
Q(A4)
Q(A4+1)
Q(A4+2)
tWH
tWS
Q(A4+3)
tOEHZ
tDH
tDS
tOELZ
(NOTE 1)
tKQLZ
tKQ
Back-to-Back
WRITEs
A1
DON’T CARE
UNDEFINED
A3
NOTE:
1. Q(A4) refers to output from address A4. Q(A4 + 1) refers to output from the next internal burst address following A4.
2. CE2# and CE2 have timing identical to CE#. On this diagram, when CE# is LOW, CE2# is LOW and CE2 is HIGH. When
CE# is HIGH, CE2# is HIGH and CE2 is LOW.
3. The data bus (Q) remains in High-Z following a WRITE cycle unless an ADSP#, ADSC# or ADV# cycle is performed.
4. GW# is HIGH.
5. Back-to-back READs may be controlled by either ADSP# or ADSC#.
t
ADSS
t
WS
t
DS
t
CES
t
AH
t
ADSH
t
WH
t
DH
t
CEH
1.7
1.7
1.7
1.7
0.5
0.5
0.5
0.5
0.5
2.0
2.0
2.0
2.0
0.5
0.5
0.5
0.5
0.5
2.2
2.2
2.2
2.2
0.5
0.5
0.5
0.5
0.5
ns
ns
ns
ns
ns
ns
ns
ns
ns
READ/WRITE TIMING PARAMETERS
-6
-7.5
-10
SYM
t
KC
f
KF
t
KH
t
KL
t
KQ
t
KQLZ
t
OELZ
t
OEHZ
t
AS
MIN
6.0
MAX
MIN
7.5
MAX
MIN
10
MAX
UNITS
ns
MHz
ns
ns
ns
ns
ns
ns
ns
166
133
100
1.7
1.7
1.9
1.9
3.2
3.2
3.5
4.2
5.0
1.5
0
1.5
0
1.5
0
3.5
4.2
4.5
1.7
2.0
2.2
-6
-7.5
-10
SYM
MIN
MAX
MIN
MAX
MIN
MAX
UNITS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MT58L32L36D | 32K x 36,3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V輸入/輸出，流水線式，雙循環(huán)取消選擇，同步脈沖靜態(tài)存儲(chǔ)器) |
| MT58L512Y32D | 16Mb SYNCBURST⑩ SRAM |
| MT58L64L18F | 64K x 18, 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出,流通式同步脈沖靜態(tài)RAM) |
| MT58L32L32F | 32K x 32， 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出,流通式同步脈沖靜態(tài)RAM) |
| MT58L32L36F | 32K x 36， 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V輸入/輸出，流通式同步脈沖靜態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT58L32L32DT-10 | 制造商:Cypress Semiconductor 功能描述:32KX32 SRAM PLASTIC TQFP 3.3V 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT58L32L32DT-6 | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Sync Quad 3.3V 1M-Bit 32K x 32 3.5ns 100-Pin TQFP 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT58L32L32DT-7.5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT58L32L32FT-10 | 制造商:Cypress Semiconductor 功能描述:32KX32 SRAM PLASTIC TQFP 3.3V 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT58L32L32FT-10 TR | 制造商:Cypress Semiconductor 功能描述:32KX32 SRAM PLASTIC TQFP 3.3V |
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