參數(shù)資料
型號(hào): MT55L64L36P1
廠商: Micron Technology, Inc.
英文描述: 64K x 36, 3.3V I/O, ZBT SRAM( 2Mb,3.3V輸入/輸出,靜態(tài)RAM)
中文描述: 64K的× 36,3.3V的I / O的ZBT SRAM的(處理器,3.3V的輸入/輸出,靜態(tài)內(nèi)存)
文件頁(yè)數(shù): 12/23頁(yè)
文件大?。?/td> 404K
代理商: MT55L64L36P1
12
2Mb: 128K x 18, 64K x 32/36 3.3V I/O, Pipelined ZBT SRAM
MT55L128L18P1_2.p65
Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
3.3V I/O, PIPELINED ZBT SRAM
State Diagram for ZBT SRAM
NOTE:
1. A STALL or IGNORE CLOCK EDGE cycle is not shown in the above diagram. This is because CKE# HIGH only blocks the
clock (CLK) input and does not change the state of the device.
2. States change on the rising edge of the clock (CLK).
DESELECT
BEGIN
READ
BURST
READ
BEGIN
WRITE
DS
DS
DS
BURST
WRITE
READ
DS
WRITE
WRITE
BURST
READ
WRITE
READ
BURST
BURST
READ
BURST
DS
WRTE
KEY:
COMMAND
DS
READ
WRITE
BURST
OPERATION
DESELECT
New READ
New WRITE
BURST READ,
BURST WRITE or
CONTINUE DESELECT
BURST
READ
WRITE
相關(guān)PDF資料
PDF描述
MT58L128L18FT-10 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
MT58L128L18FT-6.8 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
MT58L128L18FT-7.5 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
MT58L128L18FT-8.5 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
MT58L128V18FT-10 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
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