參數(shù)資料
型號: MT4S102T
元件分類: 小信號晶體管
英文描述: UHF BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: LEAD FREE, 2-1G1B, TESQ, 4 PIN
文件頁數(shù): 2/5頁
文件大小: 110K
代理商: MT4S102T
MT4S102T
2007-11-01
2
Microwave Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition Frequency
fT
VCE=2V, IC=15mA, f=2GHz
21
25
GHz
|S21e|
2(1)
VCE=2V, IC=15mA, f=2GHz
13.5
16.0
dB
Insertion Gain
|S21e|
2(2)
VCE=2V, IC=15mA, f=5.2GHz
9.0
dB
NF(1)
VCE=2V, IC=10mA, f=2GHz
0.58
0.85
dB
Noise Figure
NF(2)
VCE=2V, IC=10mA, f=5.2GHz
1.4
dB
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector Cut-off Current
ICBO
VCB=6V, IE=0
1
A
Emitter Cut-off Current
IEBO
VEB=1V, IC=0
1
A
DC Current Gain
hFE
VCE=2V, IC=15mA
200
400
-
Output Capacitance
Cob
VCB=2V, IE=0, f=1MHz
0.43
0.6
pF
Reverse Transfer Capacitance
Cre
VCB=2V, IE=0, f=1MHz (Note 1)
0.17
0.25
pF
Note 1:
Cre is measured by 3 terminal method with capacitance bridge.
Caution:
This device is sensitive to electrostatic discharge due to applied the high frequency transistor process of
fT=60GHz class is used for this product.
Please make enough tool and equipment earthed when you handle.
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