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參數(shù)資料
| 型號： | MT4S102T |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, 2-1G1B, TESQ, 4 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 110K |
| 代理商： | MT4S102T |
MT4S102T
2007-11-01
1
TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type
MT4S102T
UHF-SHF Low Noise Amplifier Application
FEATURES
Low Noise Figure :NF=0.58dB (@f=2GHz)
High Gain:|S21e|2=16.0dB (@f=2GHz)
Marking
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-Base voltage
VCBO
6
V
Collector-Emitter voltage
VCEO
3
V
Emitter-Base voltage
VEBO
1.2
V
Collector-Current
IC
20
mA
Base-Current
IB
10
mA
Collector Power dissipation
PC
60
mW
Junction temperature
Tj
150
°C
Storage temperature Range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit:mm
JEDEC
-
JEITA
-
TOSHIBA
2-1G1B
Weight: 0.0015 g (typ.)
4
3
1
2
P 8
1. Collector
2. Emitter
3. Base
4. Emitter
TESQ
0.8
±
0.05
1.2
±
0.05
1.2±0.05
0.9±0.05
3
0.12
±
0.0
5
0.52
±
0.0
5
4
2
1
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