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參數(shù)資料
| 型號： | MT4S102T |
| 元件分類： | 小信號晶體管 |
| 英文描述： | KA BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | 2-1G1B, TESQ, 4 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 110K |
| 代理商： | MT4S102T |
MT4S102T
1
2003-10-16
TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type
MT4S102T
UHF-SHF Low Noise Amplifier Application
FEATURES
Low Noise Figure :NF=0.58dB (@f=2GHz)
High Gain:|S21e|2=16.0dB (@f=2GHz)
Marking
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-Base voltage
VCBO
6
V
Collector-Emitter voltage
VCEO
3
V
Emitter-Base voltage
VEBO
1.2
V
Collector-Current
IC
20
mA
Base-Current
IB
10
mA
Collector Power dissipation
PC
60
mW
Junction temperature
Tj
150
°C
Storage temperature Range
Tstg
55~150
°C
Unit:mm
1.2±0.05
0.9±0.05
1.
2
±
0.
05
0.
8
±
0.
05
0.
12
±
0.
05
1
2
3
4
1.
BASE
2.
EMITTER
3.
COLLECTOR
4.
EMITTER
TESQ
0.
2
±
0.
05
0.
52
±
0.
05
P
8
JEDEC
－
JEITA
－
TOSHIBA
2-1G1B
Weight: 0.0015 g
P
8
2
1
3
4
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