參數(shù)資料
型號: MT4C1004J
廠商: Micron Technology, Inc.
英文描述: 4 Meg x 1 FPM DRAM(4 M x 1快速頁面模式動態(tài)RAM)
中文描述: 4梅格× 1快速頁面模式的DRAM(四米× 1快速頁面模式動態(tài)內(nèi)存)
文件頁數(shù): 6/18頁
文件大?。?/td> 226K
代理商: MT4C1004J
4 Meg x 1 FPM DRAM
D03.pm5 – Rev. 3/97
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1997, Micron Technology, Inc.
6
4 MEG x 1
FPM DRAM
OBSOLETE
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 10, 11, 12) (V
CC
= +5V
±
10%)
AC CHARACTERISTICS
PARAMETER
Read command hold time (referenced to RAS#)
RAS# hold time
READ WRITE cycle time
RAS# to WE# delay time
Write command to RAS# lead time
Transition time (rise or fall)
Write command hold time
Write command hold time (referenced to RAS#)
WE# command setup time
Write command pulse width
WE# hold time (CBR REFRESH)
WE# setup time (CBR REFRESH)
-6
SYM
t
RRH
t
RSH
t
RWC
t
RWD
t
RWL
t
T
t
WCH
t
WCR
t
WCS
t
WP
t
WRH
t
WRP
MIN
0
15
130
60
15
2
10
45
0
10
10
10
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
16
18
50
18
相關(guān)PDF資料
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