參數(shù)資料
型號(hào)： MT49H16M16FM
廠商： Micron Technology, Inc.
英文描述： REDUCED LATENCY DRAM RLDRAM
中文描述： 低延遲DRAM延遲DRAM
文件頁數(shù)： 7/43頁
文件大小： 652K
代理商： MT49H16M16FM
7
256: x16, x32 RLDRAM
MT49H8M32_3.p65 – Rev. 3, Pub. 6/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
ADVANCE
256Mb: x16, x32
2.5V V
EXT
, 1.8V V
DD
, 1.8V V
DD
Q, RLDRAM
BALL DESCRIPTIONS (continued)
T-FBGA (x32)
4C, 4E, 4P,
4T, 9C, 9E,
9P, 9T
1A–E, 1P–V,
3H, 3L, 4A,
4H, 4L, 4V,
9A, 9H, 9L,
9V, 10H, 10L,
12B–E, 12P–U
4B, 4D, 4F,
4N, 4R, 4U,
9B, 9D, 9F,
9N, 9R, 9U
12N
T-FBGA (x16)
4C, 4E, 4P,
4T, 9C, 9E,
9P, 9T
1A–E, 1P–V,
3H, 3L, 4A,
4H, 4L, 4V,
9A, 9H, 9L,
9V, 10H, 10L,
12B–E, 12P–U
4B, 4D, 4F,
4N, 4R, 4U,
9B, 9D, 9F,
9N, 9R, 9U
2B–2F, 2N–2U,
3B–3F, 3N–3U
SYMBOL
V
DD
Q
TYPE
Supply
DESCRIPTION
Power Supply: Isolated Output Buffer Supply. Nominally
1.8V. See DC Electrical Characteristics and Operating
Conditions for range.
Power Supply: GND.
V
SS
Supply
V
SS
Q
Supply
Power Supply: Isolated Output Buffer Supply. GND.
NC
–
No Connect: These signals are not internally connected
and may be connected to ground to improve package
heat dissipation.
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