- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385639 > MT49H16M16FM (Micron Technology, Inc.) REDUCED LATENCY DRAM RLDRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | MT49H16M16FM |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | REDUCED LATENCY DRAM RLDRAM |
| 中文描述： | 低延遲DRAM延遲DRAM |
| 文件頁(yè)數(shù)： | 19/43頁(yè) |
| 文件大?。?/td> | 652K |
| 代理商： | MT49H16M16FM |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)當(dāng)前第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)
19
256: x16, x32 RLDRAM
MT49H8M32_3.p65 – Rev. 3, Pub. 6/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
ADVANCE
256Mb: x16, x32
2.5V V
EXT
, 1.8V V
DD
, 1.8V V
DD
Q, RLDRAM
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(+20°C
￡
T
J
￡
+110°C; +1.75V
￡
V
DD
￡
+1.85V unless otherwise noted)
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Output High Voltage
Output Low Voltage
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Output High Voltage
Output Low Voltage
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Output High Voltage
Output Low Voltage
Clock Input Leakage Current
Input Leakage Current
Output Leakage Current
Reference Voltage Current
CONDITIONS
Matched Impedance Mode
Matched Impedance Mode
Matched Impedance Mode
Matched Impedance Mode
HSTL Strong
HSTL Strong
HSTL Strong
HSTL Strong
HSTL Weak
HSTL Weak
HSTL Weak
HSTL Weak
SYM
V
IH
V
IL
V
OH
V
OL
V
IH
V
IL
V
OH
V
OL
V
IH
V
IL
V
OH
V
OL
I
LC
I
LI
I
LO
I
REF
MIN
MAX
UNITS NOTES
V
V
V
V
V
V
V
V
V
V
V
V
μA
μA
μA
μA
V
REF
+ 0.15
V
SS
Q - 0.3
V
DD
Q
V
DD
Q + 0.3
V
REF
- 0.15
1, 2
1, 2
1, 3, 4
1, 3, 4
1, 2
1, 2
1, 3, 4
1, 3, 4
1, 2
1, 2
1, 3, 4
1, 3, 4
0
V
REF
+ 0.1
V
SS
Q - 0.3
V
DD
Q - 0.4
V
DD
Q + 0.3
V
REF
- 0.1
0.4
-5
-5
-5
-5
5
5
5
5
0V ￡ V
IN
￡ V
DD
Q
NOTE:
1. All voltages referenced to V
SS
(GND).
2. Overshoot:
Undershoot:
Power-up:
During normal operation, V
DD
Q must not exceed V
DD
. Control input signals may not have pulse widths less than
t
KHKL
(MIN) or operate at cycle rates less than
t
KHKH (MIN).
3. AC load current is higher than the shown DC values. AC I/O curves are available upon request.
4. HSTL outputs meet JEDEC HSTL Class I and Class II standards.
V
IH
(AC)
￡
V
DD
+ 0.7V for t
￡
t
KHKH/2
V
IL
(AC) 3 -0.5V for t
￡
t
KHKH/2
V
IH
￡
V
DD
Q + 0.3V and V
DD
￡
1.7V and V
DD
Q
￡
1.4V for t
￡
200ms
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MT49H8M32 | THERMISTOR PTC 100OHM 120DEG RAD |
| MT49H8M32FM | REDUCED LATENCY DRAM RLDRAM |
| MT4C1M16E5DJ-6 | EDO DRAM |
| MT4LC1M16E5DJ-6S | EDO DRAM |
| MT4LC1M16E5 | EDO DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT49H16M16FM-33 ES | 制造商:Micron Technology Inc 功能描述:DRAM CHIP RLDRAM 256MBIT 1.8V 144PIN UBGA - Trays |
| MT49H16M16FM-33 TR | 制造商:Micron Technology Inc 功能描述:16MX16 RLDRAM PLASTIC FBGA 1.8V COMMON I/O 8 BANKS 1.8V I/O - Tape and Reel |
| MT49H16M16FM-4 | 制造商:Micron Technology Inc 功能描述: 制造商:Micron Technology Inc 功能描述:DRAM CHIP RLDRAM 256MBIT 1.8V 144FBGA - Trays |
| MT49H16M16FM-4 ES | 制造商:Micron Technology Inc 功能描述:DRAM CHIP RLDRAM 256MBIT 1.8V 144FBGA - Trays |
| MT49H16M16FM-5 | 制造商:Micron Technology Inc 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。