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參數(shù)資料
| 型號： | MT46V128M4P-75L:C |
| 元件分類： | DRAM |
| 英文描述： | 128M X 4 DDR DRAM, 0.75 ns, PDSO66 |
| 封裝： | 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 |
| 文件頁數(shù)： | 47/94頁 |
| 文件大?。?/td> | 4179K |
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Micron Technology, Inc., reserves the right to change products or specifications without notice.
512MBDDRx4x8x16_2.fm - Rev. J 1/06 EN
51
2000–2005 Micron Technology, Inc. All rights reserved.
512Mb: x4, x8, x16 DDR SDRAM
Operations
Refreshing: Starts with registration of an AUTO REFRESH command and ends when tRFC
is met. Once tRFC is met, the DDR SDRAM will be in the all banks idle state.
Accessing mode register: Starts with registration of a LOAD MODE REGISTER command
and ends when tMRD has been met. Once tMRD is met, the DDR SDRAM will be in the
all banks idle state.
Precharging all: Starts with registration of a PRECHARGE ALL command and ends when
tRP is met. Once tRP is met, all banks will be in the idle state.
6. All states and sequences not shown are illegal or reserved.
7. Not bank-specific; requires that all banks are idle, and bursts are not in progress.
8. May or may not be bank-specific; if multiple banks are to be precharged, each must be in a
valid state for precharging.
9. Not bank-specific; BURST TERMINATE affects the most recent READ burst, regardless of
bank.
10. READs or WRITEs listed in the Command/Action column include READs or WRITEs with
auto precharge enabled and READs or WRITEs with auto precharge disabled.
11. Requires appropriate DM masking.
12. A WRITE command may be applied after the completion of the READ burst; otherwise, a
BURST TERMINATE must be used to end the READ burst prior to asserting a WRITE com-
mand.
相關PDF資料 |
PDF描述 |
|---|---|
| MT46V128M4P-75ZLIT:C | 128M X 4 DDR DRAM, 0.75 ns, PDSO66 |
| MT46V64M4TG-75E | 64M X 4 DDR DRAM, 0.75 ns, PDSO66 |
| MT46V64M4FG-75Z | 64M X 4 DDR DRAM, 0.75 ns, PBGA60 |
| MT47H128M8HQ-3AT | 128M X 8 DDR DRAM, 0.4 ns, PBGA60 |
| MT47H64M16HR-3IT | 64M X 16 DDR DRAM, 0.4 ns, PBGA84 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MT46V128M4T67A3WC1 | 制造商:Micron Technology Inc 功能描述:128MX4 DDR SDRAM DIE-COM COMMERCIAL 2.5V - Trays |
| MT46V128M4TG-5B/D | 制造商:Samsung Semiconductor 功能描述: |
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