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參數(shù)資料
| 型號： | MT3S19TU |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | UFM, 2-2U1B, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 162K |
| 代理商： | MT3S19TU |
MT3S19TU
2009-03-31
2
Microwave Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition frequency
fT
VCE=5 V, IC=50 mA
9
11
GHz
|S21e|
2(1)
VCE=5 V, IC=50 mA, f=500 MHz
－
19
Insertion gain
|S21e|
2(2)
VCE=5 V, IC=50 mA, f=1 GHz
11
13
dB
Noise figure
NF
VCE=5 V, IC=20 mA, f=1 GHz
1.5
1.9
dB
3
rd order intermodulation distortion output
intercept point
OIP3
VCE=5 V, IC=50 mA, f=500 MHz,
⊿
f=1 MHz
29.5
33.5
dBmW
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB=6 V, IE=0 A
100
nA
Emitter cut-off current
IEBO
VEB=1 V, IC=0 A
100
nA
DC current gain
hFE
VCE=5 V, IC=50 mA
100
160
250
Reverse transfer capacitance
Cre
VCB=5 V, IE=0 A, f=1 MHz (Note 3)
0.7
0.95
pF
Note 3: Cre is measured using a 3-terminal method with capacitance bridge
Caution:
This device is sensitive to electrostatic discharge.
Please make tools and equipments earthed enough when you handle.
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| MT3S20TU | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| MT3S20P | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications |
| MT3S20TU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications |
| MT3S21P | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:VHF-UHF Low-Noise, Low-Distortion Amplifier Application |
| MT3S22P | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications |
| MT3S35FS | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:UHF Low-Noise Amplifier Application |
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