參數(shù)資料
型號: MT3S35FS
元件分類: 小信號晶體管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: FSM, 2-1E1A, 3 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 138K
代理商: MT3S35FS
MT3S35FS
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S35FS
VCO Oscillator Stage
UHF Low-Noise Amplifier Application
FEATURES
Low Noise Figure: NF = 1.4 dB (@ f = 2 GHz)
High Gain: |S21e|2 = 13.0 dB (@ f = 2 GHz)
Marking
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
8
V
Collector-emitter voltage
VCEO
4.5
V
Emitter-base voltage
VEBO
1.5
V
Collector-current
IC
24
mA
Base-current
IB
12
mA
Collector power dissipation
PC (Note 1)
100
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device mounted on a glass-epoxy PCB (1.0 cm
2 x 0.8 mm (t))
Unit: mm
0.15
±
0.
05
0.35
±
0.
05
0.6
±
0.0
5
0.2
±
0.0
5
1.0±0.05
0.8±0.05
0.1±0.05
1
2
3
0.1
±
0.0
5
0.48
+0.02 -0.04
1.BASE
2.EMITTER
3.COLLECTOR
fSM
JEDEC
-
JEITA
-
TOSHIBA
2-1E1A
Weight: 0.0006 g (typ.)
2
1
3
2 0
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