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參數(shù)資料
| 型號(hào)： | MT3S35T |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | 2-1B1A, TESM, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 117K |
| 代理商： | MT3S35T |
MT3S35T
1
2002-08-19
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE
MT3S35T
VCO OSCILLETOR STAGE
UHF LOW NOISE AMPLIFIER APPLICATION
FEATURES
Low Noise Figure :NF=1.4dB (@f=2GHz)
High Gain:|S21e|
2=13.0dB (@f=2GHz)
Marking
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-Base voltage
VCBO
8
V
Collector-Emitter voltage
VCEO
4.5
V
Emitter-Base voltage
VEBO
1.5
V
Collector-Current
IC
24
mA
Base-Current
IB
12
mA
Collector Power dissipation
PC
100
mW
Junction temperature
Tj
150
°C
Storage temperature Range
Tstg
55~150
°C
Unit: mm
TESM
JEDEC
―
JEITA
―
TOSHIBA
2-1B1A
Weight:0.0022g (typ.)
3
1
2
Q 2
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PDF描述 |
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| MT3S35T | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MT3S36FS | 36 mA, 4.5 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MT3S36T | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MT3S37FS | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| MT3S37T | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT3S35T_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:UHF LOW NOISE AMPLIFIER APPLICATION |
| MT3S36FS | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:UHF Low-Noise Amplifier Application |
| MT3S36T | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE |
| MT3S37FS | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:UHF Low-Noise Amplifier Application |
| MT3S37T | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:UHF LOW NOISE AMPLIFIER APPLICATION |
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