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參數(shù)資料
| 型號(hào)： | MT3S05FS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | FSM, 2-1E1A, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 134K |
| 代理商： | MT3S05FS |
MT3S05FS
2007-11-01
2
Microwave Characteristics (Ta = 25°C)
Characteristics
Symbol
Condition
Min
Typ.
Max
Unit
Transition frequency
fT
VCE = 1 V, IC = 5 mA
2
4.5
GHz
S21e
2 (1)
VCE = 1 V, IC = 5 mA, f = 1 GHz
8.5
Insertion gain
S21e
2 (2)
VCE = 3 V, IC = 20 mA, f = 1 GHz
9.5
12
dB
Noise figure
NF (1)
VCE = 1 V, IC = 5 mA, f = 1 GHz
1.4
2.2
dB
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Condition
Min
Typ.
Max
Unit
Collector cutoff current
ICBO
VCB = 5 V, IE = 0
0.1
μA
Emitter cutoff current
IEBO
VEB = 1 V, IC = 0
1
μA
DC current gain
hFE
VCE = 1 V, IC = 5 mA
80
140
Reverse transfer capacitance
Cre
VCB = 1 V, IE = 0, f = 1 MHz(Note)
0.9
1.15
pF
Note: Cre is measured with a three-terminal method using a capacitance bridge.
Caution
This device is sensitive to electrostatic discharge. Ensure that tools and equipment are sufficiently grounded before
handling. When handling individual devices (which are not yet mounted on a circuit board), ensure that the
environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers
and other objects that come into direct contact with devices should be made of antistatic materials.
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| MT3S05T | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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|---|---|
| MT3S05T | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:VHF~UHF Band Low Noise Amplifier Applications |
| MT3S05T_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:VHF~UHF Band Low Noise Amplifier Applications |
| MT3S06FS | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:VHF~UHF Band Low-Noise Amplifier Applications |
| MT3S06S | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
| MT3S06S_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:VHF~UHF Band Low Noise Amplifier Applications |
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