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參數(shù)資料
| 型號(hào)： | MT3S06S |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | 2-2H1A, SSM, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 126K |
| 代理商： | MT3S06S |
MT3S06S
2003-08-08
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S06S
VHF~UHF Band Low Noise Amplifier Applications
Low noise figure: NF = 1.6dB (VCE = 3 V, IC = 3 mA, f = 2 GHz)
High gain: |S21e|2 = 9.5dB (VCE = 3 V, IC = 7 mA, f = 2 GHz)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
10
V
Collector-emitter voltage
VCEO
5
V
Emitter-base voltage
VEBO
1.5
V
Base current
IC
15
mA
Collector current
IB
7
mA
Collector power dissipation
PC
60
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Marking
Microwave Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition frequency
fT
VCE = 3 V, IC = 5 mA
7
10
GHz
S21e
2 (1)
VCE = 1 V, IC = 5 mA, f = 2 GHz
8.5
Insertion gain
S21e
2 (2)
VCE = 3 V, IC = 7 mA, f = 2 GHz
6.5
9.5
dB
NF (1)
VCE = 1 V, IC = 3 mA, f = 2 GHz
1.7
3
Noise figure
NF (2)
VCE = 3 V, IC = 3 mA, f = 2 GHz
1.6
3
dB
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2H1A
Weight: 0.0024 g (typ.)
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| MT3S06T | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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