參數(shù)資料
型號: MT3S06T
元件分類: 小信號晶體管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: 2-1B1A, 3 PIN
文件頁數(shù): 1/5頁
文件大?。?/td> 255K
代理商: MT3S06T
MT3S06T
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S06T
VHF~UHF Band Low Noise Amplifier Applications
Low noise figure: NF = 1.6dB (VCE = 3 V, IC = 3 mA, f = 2 GHz)
High gain: |S21e|2 = 9.5dB (VCE = 3 V, IC = 7 mA, f = 2 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
10
V
Collector-emitter voltage
VCEO
5
V
Emitter-base voltage
VEBO
1.5
V
Base current
IC
15
mA
Collector current
IB
7
mA
Collector power dissipation
PC
60
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA
2-1B1A
Weight: 0.0022 g (typ.)
相關(guān)PDF資料
PDF描述
MT3S07FS UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
MT3S07FS UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
MT3S07S UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
MT3S07T UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
MT3S07U UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
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