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參數(shù)資料
| 型號(hào)： | MSSP25250-70-R |
| 元件分類： | PIN二極管 |
| 英文描述： | 350 V, SILICON, PIN DIODE |
| 封裝： | 1.5 X 0.76 MM, 0.2 MM HEIGHT, ROHS COMPLIANT, CASE 70, 2 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 487K |
| 代理商： | MSSP25250-70-R |
TEL: 603-641-SEMI (7364) metelics-sales@aeroflex.com www.aeroflex.com/metelics
Revision Date: 6/3/09
2
Parameter
Symbol
Units
Test Conditions
Minimum
Typical
Maximum
Value
Voltage Breakdown
-Vb
Volts
| - 10 μA | @ DC
| - 350 |
| - 400 |
(See Note 1)
Forward Voltage
Vf
Volts
+100 mA @ DC
0.8
1.1
1.2
Reverse Leakage Current
- Ir
ηA
| -100 V | @ DC
| -20 |
| -50 |
Series Resistance
Rs
Ω
+ 100 mA @ 1 GHz
0.9
1.2
Parallel Resistance
Rp
K
Ω
-40 V @ 1 GHz
50
150
Capacitance
Ct
pF
-100 V @ 1 MHz
0.28
0.32
Minority Carrier Lifetime
TL
μS
( 50% Control – 90 %
400
500
700
Output Voltage)
If =+10 mA /-Ir =- 6 mA
F = 1 KHz
C.W. Thermal Resistance
θ
C/W
IH = 1A, IL = 10 mA
30
35
Absolute Maximum Ratings @ TA = + 25 C ( Unless Otherwise Defined )
Parameter
Absolute Maximum Value
Forward Current
500 mA
Reverse Voltage
| -400 | V
Forward Voltage
1.2 V @ 100 mA
Operating Temperature
- 65 C to + 125 C
Storage Temperature
- 65 C to + 150 C
Junction Temperature
+ 175 C
Total Dissipated RF & D.C. Power
2.0 W @ + 25 C
( Diode Case in Air Ambient )
De-Rate Linearly at -13.3 mW / C to 0 W @ + 175 C
Total Dissipated RF & D.C. Power
5.0 W @ + 25 C
( Diode Case at Thermal Ground )
De-Rate Linearly at -33.3 mW / C to 0 W @ + 175 C
Assembly Temperature
+ 260 C for 10 Seconds
MSSP25250-70 Electrical Specifications @ TA = + 25 C
( Unless Otherwise Defined)
Electrical Specification Notes:
1.
Series Resistance, ( Rs ) and Parallel Resistance ( Rp ) are measured on the HP 4291 Impedance Analyzer.
2.
Total Capacitance, ( Ct ) is the summation of the Diode Junction Capacitance, ( Cj ), and the
Parasitic Capacitance, Cpar.
SEMI-SCALETM PIN Diodes
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