參數(shù)資料
型號： MSWSSB-020-30
元件分類： PIN二極管
英文描述： 200 V, SILICON, PIN DIODE
封裝： 1.90 X 1.10 MM, ROHS COMPLIANT, PLASTIC, CASE 2012, DFN-3
文件頁數(shù)： 1/4頁
文件大?。?/td> 902K
代理商： MSWSSB-020-30
1
A broadband, High Linearity medium power series
shunt switch element in a 1.9 X 1.1 mm DFN package.
This device is designed for wireless Telecommunica-
tion infrastructure and test instrument applications. It
is also suited for other applications in 0.1 ~ 10 GHz.
Supports up to 20 watt
Low insertion loss typical 0.3 dB @ 2.7 GHz
Low insertion loss typical 0.4 dB @ 10.0 GHz
High Isolation typical 55 dB @ 2.7 GHz
High Isolation typical 33 dB @ 10.0 GHz
METELICS
Description
SYMBOL
TEST CONDITIONS
MIN
TYPICAL
MAX
UNITS
V
BR
I
R = 10 μA
200
–
V
SP
IF = 10 mA
I
R = 6 mA
10%/90%
–
1000
–
ns
I
L
I = -50 mA*
F = 2.3 ~ 2.7 GHz
–
0.3
0.5
dB
F < 10.0 GHz
–
0.6
0.8
dB
IRL
I = -50 mA*
F = 2.3 ~ 2.7 GHz
20
25
–
dB
F < 10.0 GHz
15
20
–
dB
ORL
I = -50 mA*
F = 2.3 ~ 2.7 GHz
20
25
–
dB
F < 10.0 GHz
15
18
–
dB
I
SO
I = +50 mA*
F< 2.3 ~ 2.7 GHz
45
55
–
dB
28
35
–
dB
Electrical Characteristics, T
C = +25 °C
RATING
LIMITS
UNITS
V
R
200
V
I
F
100
mA
In. Power
20 (CW)
Watts
T
J
+175
°C
T
STG
-65 to +150
°C
T
SOLDER
+260 °C per JEDEC STD-J-20C
Maximum Ratings
(2012)
Molden Plastic DFN
* Positive current is defined as current going into PIN 2.
Revision Date: 7/12/2010
Features
MSWSSB-020-30
PIN DIODE SHUNT SWITCH ELEMENT
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