參數(shù)資料
型號: MSG36E31
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: 2 CHANNEL, L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, SSSMINI6-F1, 6 PIN
文件頁數(shù): 2/7頁
文件大?。?/td> 294K
代理商: MSG36E31
MSG36E31
2
SJC00318CED
■ Electrical Characteristics (continued) T
a = 25°C ± 3°C
Tr2
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
ICBO
VCB = 9 V, IE = 01
A
Collector-emitter cutoff current (Base open)
ICEO
VCE
= 6 V, I
B
= 01
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 1 V, IC = 01
A
Forward current transfer ratio
hFE
VCE = 3 V, IC = 3 mA
100
220
Transition frequency *
fT
VCE
= 3 V, I
C
= 10 mA, f = 2 GHz
19
GHz
Forward transfer gain *
S
21e
2
VCE = 3 V, IC = 10 mA, f = 2 GHz
9.0
11.0
dB
Noise figure *
NF
VCE = 3 V, IC = 3 mA, f = 2 GHz
1.4
2.0
dB
Collector output capacitance
Cob
VCB = 3 V, IE = 0, f = 1 MHz
0.3
0.6
pF
(Common base, input open circuited) *
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Observe precautions for handling. Electrostatic sensitive devices.
3. *: Verified by random sampling
0
40
120
80
0
140
120
100
60
40
80
20
Collector
power
dissipation
P
C
(mW
)
Ambient temperature T
a (°C)
Common characteristics chart
PC Ta
This product complies with the RoHS Directive (EU 2002/95/EC).
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