- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄96086 > MSG36E31 (PANASONIC CORP) 2 CHANNEL, L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | MSG36E31 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2 CHANNEL, L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SSSMINI6-F1, 6 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 294K |
| 代理商： | MSG36E31 |
Thank
you
for
browsing
our
datasheets.
This
product
is
not
available
for
the
renewal
of
our
product
lineup.
We
apologize
for
any
trouble
this
may
have
caused
you.
Thank
you
for
your
patience.
For
further
information,
please
contact
our
sales
offices.
Transistors
1
Publication date: November 2005
SJC00318CED
MSG36E31
SiGe HBT type
For low-noise RF amplifier
■ Features
Compatible between high breakdown voltage and high cut-off frequency
Low noise, high-gain amplification
Twoelementsincorporatedintoonepackage(Eachtransistorisseparated)
Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
MSG33003 + MSG33001
■ Absolute Maximum Ratings T
a = 25°C
Marking Symbol: 7D
Internal Connection
Unit: mm
0 to 0.02
65
4
1
2
3
1.00
±
0.04
(0.10)
0.10
1.00
±0.05
Display at No.1 lead
0.80
±
0.05
0.10
(0.35)
0.37
+0.03 -
0.02
0.12+0.03
-0.02
4
Tr1
Tr2
5
6
1
3
2
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
ICBO
VCB = 9 V, IE = 01
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = 6 V, IB = 01
A
Emitter-base cutoff current (Collector open)
IEBO
VEB
= 1 V, I
C
= 01
A
Forward current transfer ratio
hFE
VCE = 3 V, IC = 10 mA
100
220
Transition frequency *
fT
VCE = 3 V, IC = 30 mA, f = 2 GHz
19
GHz
Forward transfer gain *
S
21e
2 V
CE
= 3 V, I
C
= 30 mA, f = 2 GHz
7.0
10.0
dB
Noise figure *
NF
VCE = 3 V, IC = 10 mA, f = 2 GHz
1.4
2.0
dB
Collector output capacitance
Cob
VCB = 3 V, IE = 0, f = 1 MHz
0.5
0.8
pF
(Common base, input open circuited) *
■ Electrical Characteristics T
a
= 25°C ± 3°C
Tr1
1: Base (Tr1)
4: Collector (Tr2)
2: Emitter (Tr1)
5: Emitter (Tr2)
3: Base (Tr2)
6: Collector (Tr1)
SSSMini6-F1 Package
Parameter
Symbol
Rating
Unit
Tr1
Collector-base voltage
VCBO
9V
(Emitter open)
Collector-emitter voltage
VCEO
6V
(Base open)
Emitter-base voltage
VEBO
1V
(Collector open)
Collector current
IC
100
mA
Tr2
Collector-base voltage
VCBO
9V
(Emitter open)
Collector-emitter voltage
VCEO
6V
(Base open)
Emitter-base voltage
VEBO
1V
(Collector open)
Collector current
IC
30
mA
Overall
Total power dissipation *
PT
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
55 to +125
°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Observe precautions for handling. Electrostatic sensitive devices.
3. *: Verified by random sampling
Note) *: Copper plate at the collector is 5.0 cm2 on substrate at 10 mm
× 12 mm × 0.8 mm.
This product complies with the RoHS Directive (EU 2002/95/EC).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MSG43002 | L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| MSG43003 | SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| MSG430D4 | L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| MSG56BBA0LBF | RF SMALL SIGNAL TRANSISTOR |
| MSG56BBA | C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MSG36E41 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:SiGe HBT type |
| MSG43001 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:SiGe HBT type For low-noise RF amplifier |
| MSG43004 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:SiGe HBT type For low-noise RF amplifier |
| MSGB39WP | 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:HIGH EFF.RED/GREEN DUAL COLOR LAMP |
| MSGB48TA | 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:RED/GREEN LAMP |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。