參數(shù)資料
型號(hào): MSG430D4
廠商: PANASONIC CORP
元件分類: 小信號(hào)晶體管
英文描述: L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: 1 X 0.60 MM, 0.39 MM HEIGHT, ROHS COMPLIANT, ULTRA MINI, LEADLESS, ML3-N2, 3 PIN
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 536K
代理商: MSG430D4
Thank
you
for
browsing
our
datasheets.
This
product
is
not
available
for
the
renewal
of
our
product
lineup.
We
apologize
for
any
trouble
this
may
have
caused
you.
Thank
you
for
your
patience.
For
further
information,
please
contact
our
sales
offices.
Transistors
Publication date: November 2005
SJC00340AED
1
MSG430D4
SiGe HBT type
For low-noise RF amplier
Features
Compatible between high breakdown voltage and high cutoff frequency
Low-noise, high-gain amplication
Optimum for high-density mounting and downsizing of the equipment for
Ultraminiature leadless package 0.6 mm × 1.0 mm (height 0.39 mm)
Absolute Maximum Ratings
Ta = 25
aa
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
9
V
Collector-emitter voltage (Base open)
VCEO
6
V
Emitter-base voltage (Collector open)
VEBO
1
V
Collector current
IC
100
mA
Collector power dissipation *
PC
100
mW
Junction temperature
Tj
TT
125
°
C
Storage temperature
Tstg
TT
–55 to +125
°
C
Note) Copper plate at the collector is 5.0 mm2 on substrate at 10 mm × 12 mm ×
0.8 mm.
Electrical Characteristics
Ta = 25
aa
°
C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
ICBO
VCB = 9 V, IE = 0
EE
1
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = 6 V, I
CE
B = 0
1
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 1 V, IC = 0
C
1
A
Forward current transfer ratio
hFE
hh
VCE = 3 V, I
CE
C = 15 mA
C
100
220
Transition frequency *
fT
ff
VCE = 3 V, I
CE
C = 30 mA, f = 2 GHz
C
14
GHz
Forward transfer gain *
S21e2 VCE = 3 V, I
CE
C = 30 mA, f = 2 GHz
C
3.0
6.0
dB
Noise gure *
NF
VCE = 3 V, I
CE
C = 15 mA, f = 2 GHz
C
1.6
2.2
dB
Collector output capacitance
(Common base, input open circuited) *
Cob
VCB = 3 V, IE = 0, f = 1 MHz
EE
1.1
1.4
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Observe precautions for handling. Electrostatic sensitive devices.
3. *: Veried by random sampling
Unit : mm
1 : Base
2 : Emitter
3 : Collector
ML3-N2 Package
0.60
±0.05
1.00±0.05
2
1
3
0.39+0.01
0.03
0.25±0.05
0.50
±0.05
0.65±0.01
0.15
±0.05
2
1
0.35
±0.01
0.05±0.03
0.05
±0.03
3
Marking Symbol: 5Z
This product complies with the RoHS Directive (EU 2002/95/EC).
相關(guān)PDF資料
PDF描述
MSG56BBA0LBF RF SMALL SIGNAL TRANSISTOR
MSG56BBA C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
MSIS95C13 5 TIMER(S), PROGRAMMABLE TIMER, PDIP40
MSK3001 5.6 A, 100 V, 0.3 ohm, 6 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
MSK3014 10 A, 100 V, 0.2 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MSGB39WP 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:HIGH EFF.RED/GREEN DUAL COLOR LAMP
MSGB48TA 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:RED/GREEN LAMP
MSGB51T 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:HIGH EFFICIENCY RED/GREEN BI-COLOR LAMP
MSGB51TAP 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:HIGH EFFICIENCY RED/GREEN DUAL COLOR LAMP
MSGBB557TA 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:HIGH BRIGHTNESS SEVEN COLOR BLINKING LED LAMP