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參數(shù)資料
| 型號： | MSG36C42 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2 CHANNEL, L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SSSMINI6-F1, 6 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 340K |
| 代理商： | MSG36C42 |
ZJC00433BED
This product complies with the RoHS Directive (EU 2002/95/EC).
MSG36C42
2
Electrical Characteristics Ta = 25°C±3°C
Tr1
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
ICBO
VCB = 9 V, IE = 0
1
m
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = 6 V, IB = 0
1
m
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 1 V, IC = 0
1
m
A
Forward current transfer ratio
hFE
VCE = 3 V, IC = 15 mA
100
220
Transition frequency *
fT
VCE = 3 V, IC = 30 mA, f = 2 GHz
16
GHz
Forward transfer gain *
S21e2 VCE = 3 V, IC = 30 mA, f = 2 GHz
5.0
8.0
dB
Noise gure *
NF
VCE = 3 V, IC = 15 mA, f = 2 GHz
1.6
2.2
dB
Collector output capacitance
(Common base, input open circuited) *
Cob
VCB = 3 V, IE = 0, f = 1 MHz
0.7
1.0
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Observe precautions for handling. Electrostatic sensitive devices.
3. *: Veried by random sampling
Tr2
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
ICBO
VCB = 9 V, IE = 0
1
m
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = 6 V, IB = 0
1
m
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 1 V, IC = 0
1
m
A
Forward current transfer ratio
hFE
VCE = 3 V, IC = 6 mA
100
220
Transition frequency *
fT
VCE = 3 V, IC = 20 mA, f = 2 GHz
19
GHz
Forward transfer gain *
S21e2 VCE = 3 V, IC = 20 mA, f = 2 GHz
7.5
10.5
dB
Noise gure *
NF
VCE = 3 V, IC = 6 mA, f = 2 GHz
1.4
2.0
dB
Collector output capacitance
(Common base, input open circuited) *
Cob
VCB = 3 V, IE = 0, f = 1 MHz
0.3
0.6
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Observe precautions for handling. Electrostatic sensitive devices.
3. *: Veried by random sampling
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