參數(shù)資料
型號： MSD601-ST1G
廠商： ON SEMICONDUCTOR
元件分類： 小信號晶體管
英文描述： 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： LEAD FREE, CASE 318D-04, SC-59, 3 PIN
文件頁數(shù)： 1/4頁
文件大?。?/td> 42K
代理商： MSD601-ST1G
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 7
1
Publication Order Number:
MSD601RT1/D
MSD601RT1, MSD601ST1
Preferred Device
NPN General Purpose
Amplifier Transistors
Surface Mount
Features
PbFree Packages are Available
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector Base Voltage
V(BR)CBO
60
Vdc
Collector Emitter Voltage
V(BR)CEO
50
Vdc
Emitter Base Voltage
V(BR)EBO
7.0
Vdc
Collector Current Continuous
IC
100
mAdc
Collector Current Peak
IC(P)
200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
55 ~ +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
SC59
CASE 318D
MARKING
DIAGRAM
2
1
3
COLLECTOR
3
2
BASE
1
EMITTER
Yx M
G
x
= R for RT1
S for ST1
M
= Date Code
G
= PbFree Package
(Note: Microdot may be in either location)
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
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PDF描述
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MSG36C42 2 CHANNEL, L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MSD602 制造商:ETL 制造商全稱:E-Tech Electronics LTD 功能描述:NPN General Purpose Amplifier Transistor Surface Mount
MSD602RT1 制造商:NA 功能描述:
MSD602-RT1 功能描述:兩極晶體管 - BJT 500mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MSD602-RT1G 功能描述:兩極晶體管 - BJT SS GP XSTR NPN 25V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MSD6100 功能描述:二極管 - 通用，功率，開關(guān) 100V 200mA RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube
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