參數(shù)資料
型號(hào)： MSD42T1G
廠商： ON SEMICONDUCTOR
元件分類： 小信號(hào)晶體管
英文描述： 150 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： HALOGEN FREE AND ROHS COMPLIANT, CASE 419-04, SC-70, 3 PIN
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 125K
代理商： MSD42T1G
Semiconductor Components Industries, LLC, 2010
May, 2010 Rev. 7
1
Publication Order Number:
MSD42WT1/D
MSD42WT1G, MSD42T1G
NPN Silicon General
Purpose High Voltage
Transistors
This NPN Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323
and SC59 packages which are designed for low power surface
mount applications.
Features
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V(BR)CBO
300
Vdc
Collector-Emitter Voltage
V(BR)CEO
300
Vdc
Emitter-Base Voltage
V(BR)EBO
6.0
Vdc
Collector Current Continuous
IC
150
mAdc
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation (Note 1)
PD
150
mW
Junction Temperature
TJ
150
°C
Storage Temperature Range
Tstg
55X+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
RecommendedOperating Conditions may affect device reliability.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
300
Vdc
Collector-Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
300
Vdc
Emitter-Base Breakdown Voltage
(IE = 100 mAdc, IE = 0)
V(BR)EBO
6.0
Vdc
Collector-Base Cutoff Current
(VCB = 200 Vdc, IE = 0)
ICBO
0.1
mA
EmitterBase Cutoff Current
(VEB = 6.0 Vdc, IB = 0)
IEBO
0.1
mA
DC Current Gain (Note 2)
(VCE = 10 Vdc, IC = 1.0 mAdc)
(VCE = 10 Vdc, IC = 30 mAdc)
hFE1
hFE2
25
40
Collector-Emitter Saturation Voltage
(Note 2) (IC = 20 mAdc,
IB = 2.0 mAdc)
VCE(sat)
0.5
Vdc
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum
recommendedfootprint.
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
SC70 (SOT323)
CASE 419
STYLE 3
MARKING DIAGRAMS
3
1
2
Device
Package
Shipping
ORDERING INFORMATION
COLLECTOR
3
1
BASE
2
EMITTER
http://onsemi.com
3
1
2
SC59
CASE 318D
MSD42T1G
SC59
(PbFree)
3000 / Tape & Reel
MSD42WT1G
3000 / Tape & Reel
SC70
(PbFree)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1D MG
G
1
XXX
= Specific Device Code
M
= Date Code
G
= PbFree Package
J1D MG
G
1
(Note: Microdot may be in either location)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MSD42WT1 功能描述:兩極晶體管 - BJT 150mA 300V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MSD42WT1G 功能描述:兩極晶體管 - BJT 150mA 300V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MSD42WT1G_10 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN Silicon General Purpose High Voltage Transistors
MSD4410C 功能描述:LED 顯示器和配件 .40" 2-DI GN GY FACE RoHS:否 制造商:Avago Technologies 顯示器類型:7 Segment 數(shù)位數(shù)量:2 字符大小:7.8 mm x 14.22 mm 照明顏色:Red 波長(zhǎng):628 nm 共用管腳:Common Anode 工作電壓:2.05 V 工作電流:20 mA 最大工作溫度:+ 85 C 最小工作溫度:- 35 C 封裝:Tube
MSD4440C 功能描述:LED 顯示器和配件 .40" 2-DI GN GY FACE RoHS:否 制造商:Avago Technologies 顯示器類型:7 Segment 數(shù)位數(shù)量:2 字符大小:7.8 mm x 14.22 mm 照明顏色:Red 波長(zhǎng):628 nm 共用管腳:Common Anode 工作電壓:2.05 V 工作電流:20 mA 最大工作溫度:+ 85 C 最小工作溫度:- 35 C 封裝:Tube
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