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參數(shù)資料
| 型號： | MSC74519 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN RF POWER TRANSISTOR |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, FM-2 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 25K |
| 代理商： | MSC74519 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CBO
I
C
= 2.0 mA
BV
EBO
I
C
= 2.0 mA
I
CBO
V
= 28 V
h
FE
V
CE
= 5 V I
C
= 0.4 A
TEST CONDITIONS
MINIMUM
40
TYPICAL MAXIMUM
UNITS
V
3.5
V
0.5
mA
10
200
---
P
G
η
C
V
CC
= 20 V P
IN
= 2.0 W f = 1.6 - 1.8 GHz
Pulse Width = 100
μ
S Duty Cycle = 10%
6.8
47
dB
%
NPN RF POWER TRANSISTOR
MSC74519
DESCRIPTION:
The
ASI MSC74519
is a Common
Base Device Designed for Class C
Applications in the 1.6 - 1.8 GHz
bands.
FEATURES INCLUDE:
Input/Output Matching
Gold Metallization
Hermetically Sealed Package
Emitter Ballasting
MAXIMUM RATINGS
I
C
1.0 A
V
CBO
40 V
P
DISS
31 W @ T
C
= 25
O
C
-55
O
C to+200
O
C
-55
O
C to+200
O
C
5.5
O
C/W
T
J
T
STG
θ
JC
PACKAGE STYLE 400 2L FLG
1 = COLLECTOR 2 & 4 = BASE
3 = EMITTER
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