參數(shù)資料
型號: MSC80213
廠商: ADVANCED SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: NPN RF TRANSISTOR
中文描述: S BAND, Si, NPN, RF POWER TRANSISTOR
封裝: HERMETIC SEALED, FM-2
文件頁數(shù): 1/2頁
文件大?。?/td> 32K
代理商: MSC80213
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CER
I
C
= 5.0 mA R
BE
= 10
BV
CBO
I
C
= 1.0 mA
BV
EBO
I
E
= 1.0 mA
I
CBO
V
CB
= 22 V
h
FE
V
CE
= 5.0 V I
C
= 250 mA
TRANS1.SYM
TEST CONDITIONS
MINIMUM
44
TYPICAL
MAXIMUM
UNITS
V
44
V
V
3.5
0.5
mA
30
300
C
OB
V
CB
= 22 V f = 1.0 MHz
5.0
pF
P
out
P
G
η
C
V
CC
= 22 V P
IN
= 0.38 W f = 2.3 GHz
3.8
10
40
W
Db
%
NPN RF TRANSISTOR
MSC80213
DESCRIPTION:
The
ASI MSC80213
is a Silicon NPN
Microwave Transistor Supplied in a
Common Base Package, Designed for
general purpose Applications up to 2.3
GHz.
FEATURES:
Hermetically Sealed Package
Gold Metallization
MAXIMUM RATINGS
I
C
600 mA
V
CC
26 V
V
EB
3.5 V
P
DISS
11.5 W @ T
C
= 50
O
C
-65
O
C to +200
O
C
-65
O
C to +200
O
C
13
O
C/W
T
J
T
STG
θ
JC
PACKAGE 230 2L FLG
1 = Collector 2 = Emitter
3 = Base
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