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參數(shù)資料
| 型號： | MSC8004 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | HIGH POWER GaAs FET |
| 中文描述： | KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | 30, FM-2 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 27K |
| 代理商： | MSC8004 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
ELECTRICAL SPECIFICATIONS
T
A
= 25
O
C
SYMBOL
TRANS1.SYM
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
I
DDS
SATURATED DRAIN CURRENT
V
DS
= 3.0 V V
GS
= 0 V
850
1100
1400
mA
V
GS (off)
GATE TO SOURCE CUT-OFF VOLTAGE
V
DS
= 3.0 V I
D
= 1.0 mA
-2
-3
-5
V
HIGH POWER GaAs FET
MSC8004
FEATURES INCLUDE:
P1dB
= 1.6 W
(TYP)
@ 12 GHz
High Output Power:
GLP
= 5 dB
(TYP)
@ 12 GHz
High power gain:
Hadd
= 18%
(TYP)
@ 12 GHz
High power added efficiency:
APPLICATIONS:
S
to
Ku
Band Power Amplifiers
FET PACKAGE TYPE 30
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