參數(shù)資料
型號: MS2393
元件分類: 功率晶體管
英文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封裝: 0.400 X 0.400 INCH, HERMETIC SEALED, METAL CERAMIC, M138, 2 PIN
文件頁數(shù): 1/5頁
文件大?。?/td> 205K
代理商: MS2393
MS2393
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:
The MS2393 is a gold metallized, silicon NPN power transistor.
The MS2393 is designed for applications requiring high peak power
and low duty cycles such as IFF, DME and TACAN. The MS2393 is
packaged in a metal/ceramic package with internal input/output
matching, resulting in improved broadband performance and low
thermal resistance.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
65
V
VCES
Collector-Emitter Voltage
65
V
VEBO
Emitter-Base Voltage
3.5
V
IC
Device Current
11
A
PDISS
Power Dissipation
583
W
TJ
Junction Temperature
+200
°°C
TSTG
Storage Temperature
-65 to +150
°°C
Thermal Data
RTH(j-c)
Junction-Case Thermal Resistance
0.30
°°C/W
Features
Designed For High Power Pulse IFF, DME, and TACAN
Applications
200 W (typ.) IFF 1030 – 1090 MHz
150 W (min.) DME 1025 – 1150 MHz
140 W (typ.) TACAN 960 – 1215 MHz
8.2 dB Gain
Refractory Gold Metallization
Ballasting And Low Thermal Resistance For Reliability
And Ruggedness
20:1 Load VSWR At Specified Operating Conditions
Input And Output Matched Common Base
Configuration
RF AND MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
相關PDF資料
PDF描述
MS2421 L BAND, Si, NPN, RF POWER TRANSISTOR
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