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參數(shù)資料
| 型號(hào)： | MRFG35010 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國(guó))有限公司 |
| 英文描述： | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| 中文描述： | 砷化鎵PHEMT的射頻功率場(chǎng)效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 235K |
| 代理商： | MRFG35010 |
MRFG35010
5
1
Freescale Semiconductor
Wireless RF Product Device Data
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS or UMTS driver applications with frequencies from
1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or
Class A linear base station applications.
Typical W
CDMA Performance:
42 dBc ACPR, 3.55 GHz, 12 Volts,
I
DQ
= 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
@ 0.01% Probability)
Output Power — 1 Watt
Power Gain — 10 dB
Efficiency — 30%
10 Watts P1dB @ 3.55 GHz
Excellent Phase Linearity and Group Delay Characteristics
High Gain, High Efficiency and High Linearity
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain
Source Voltage
V
DSS
15
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
28.3
0.19
W
W/
°
C
Gate
Source Voltage
V
GS
5
Vdc
RF Input Power
P
in
33
dBm
Storage Temperature Range
T
stg
65 to +175
°
C
Channel Temperature
(1)
T
ch
175
°
C
Operating Case Temperature Range
T
C
20 to +90
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Class A
Class AB
R
θ
JC
5.3
4.8
°
C/W
1. For reliable operation, the operating channel temperature should not exceed 150
°
C.
MRFG35010
Rev. 6, 12/2004
Freescale Semiconductor
Technical Data
3.5 GHz, 10 W, 12 V
POWER FET
GaAs PHEMT
MRFG35010
CASE 360D
02, STYLE 1
NI
360HF
Freescale Semiconductor, Inc., 2004. All rights reserved.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRFG35010ANR5 | 功能描述:射頻GaAs晶體管 3.5GHZ 10W GAAS PLD1.5N RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| MRFG35010ANT1 | 功能描述:射頻GaAs晶體管 3.5GHZ 10W GAAS PLD1.5N RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| MRFG35010AR1 | 功能描述:射頻GaAs晶體管 3.5GHZ 10W GAAS NI360HF RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| MRFG35010AR5 | 功能描述:射頻GaAs晶體管 3.5GHZ 10W GAAS NI360HF RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| MRFG35010MR5 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
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