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參數(shù)資料
| 型號(hào)： | MRFE6S9205HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN |
| 文件頁(yè)數(shù)： | 9/12頁(yè) |
| 文件大?。?/td> | 404K |
| 代理商： | MRFE6S9205HSR3 |
6
RF Device Data
Freescale Semiconductor
MRFE6S9205HR3 MRFE6S9205HSR3
TYPICAL CHARACTERISTICS
η
D
,DRAIN
EFFICIENCY
(%)
ηD
P
ARC
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
960
15
23
800
2.5
36
IRL
Gps
PARC
f, FREQUENCY (MHz)
Figure 3. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout = 58 Watts Avg.
VDD = 28 Vdc, Pout = 58 W (Avg.)
IDQ = 1400 mA, SingleCarrier
WCDMA, 3.84 MHz, Channel
Bandwidth, Input PAR = 7.5 dB
@ 0.01% Probability (CCDF)
16
0
4
8
12
G
ps
,POWER
GAIN
(dB)
940
920
900
880
860
840
820
16
17
18
19
20
21
22
34
32
30
0.5
1
1.5
2
η
D
,DRAIN
EFFICIENCY
(%)
P
ARC
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
ηD
960
14
22
800
4
46
IRL
Gps
PARC
f, FREQUENCY (MHz)
Figure 4. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout = 95 Watts Avg.
VDD = 28 Vdc, Pout = 95 W (Avg.), IDQ = 1400 mA
SingleCarrier WCDMA, 3.84 MHz Channel Bandwidth
Input PAR = 7.5 dB @ 0.01% Probability (CCDF)
15
0
5
10
G
ps
,POWER
GAIN
(dB)
21
20
19
18
17
16
15
820
840
860
880
900
920
940
44
42
40
2
2.5
3
3.5
400
17
23
1
1750 mA
IDQ = 2100 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two-Tone Power Gain versus
Output Power
VDD = 28 Vdc, f1 = 875 MHz, f2 = 885 MHz
TwoTone Measurements, 10 MHz Tone Spacing
G
ps
,POWER
GAIN
(dB)
1400 mA
700 mA
1050 mA
10
100
18
19
20
21
22
400
60
0
1
1050 mA
IDQ = 700 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
VDD = 28 Vdc, f1 = 875 MHz, f2 = 885 MHz
TwoTone Measurements, 10 MHz Tone Spacing
IMD,
THIRD
ORDER
INTERMODULA
TION
DIST
ORTION
(dBc)
2100 mA
1750 mA
10
100
10
20
30
40
50
1400 mA
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