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參數(shù)資料
| 型號： | MRFE6S9205HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN |
| 文件頁數(shù)： | 11/12頁 |
| 文件大?。?/td> | 404K |
| 代理商： | MRFE6S9205HSR3 |
8
RF Device Data
Freescale Semiconductor
MRFE6S9205HR3 MRFE6S9205HSR3
TYPICAL CHARACTERISTICS
350
18
22
0
VDD = 24 V
28 V
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
IDQ = 1400 mA
f = 880 MHz
G
ps
,POWER
GAIN
(dB)
32 V
21
20
19
50
100
150
200
250
300
250
108
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device is
operated at VDD = 28 Vdc, Pout = 58 W Avg., and ηD = 34%.
MTTF calculator available at http:/www.freescale.com/rf. Select Tools
(Software & Tools)/Calculators to access MTTF calculators by product.
107
106
105
110
130
150
170
190
MTTF
(HOURS)
210
230
W-CDMA TEST SIGNAL
10
0.0001
100
0
PEAKTOAVERAGE (dB)
Figure 13. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 50% Clipping, Single-Carrier Test Signal
10
1
0.1
0.01
0.001
24
68
PROBABILITY
(%)
WCDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @
"5 MHz Offset.
Input PAR = 7.5 dB @ 0.01% Probability
on CCDF
Input Signal
Compressed Output
Signal @ 58 W Pout
60
110
10
(dB)
20
30
40
50
70
80
90
100
3.84 MHz
Channel BW
7.2
1.8
5.4
3.6
0
1.8
3.6
5.4
9
f, FREQUENCY (MHz)
Figure 14. Single-Carrier W-CDMA Spectrum
7.2
ACPR in 3.84 MHz
Integrated BW
ACPR in 3.84 MHz
Integrated BW
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| MRFE6S9205HSR5 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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| MRFE6VP100HR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 100W 50V ISM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6VP100HR5-CUT TAPE | 制造商:Freescale 功能描述:MRFE6VP Series 1 GHz 100 W 26 dB Gain PNP RF Power Transistor - CASE 017 AA |
| MRFE6VP100HSR5 | 功能描述:射頻MOSFET電源晶體管 VHV6 100W 50V ISM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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