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參數(shù)資料
| 型號(hào)： | MRF9210R |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-860C3, CASE 375G-04, 4 PIN |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 298K |
| 代理商： | MRF9210R |
4
RF Device Data
Freescale Semiconductor
MRF9210R3
TYPICAL CHARACTERISTICS
η
900
8
18
860
55
30
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 2. Class AB Broadband Circuit
Performance
VDD = 26 Vdc
Pout = 40 W (Avg.)
IDQ = 1900 mA
NCDMA IS95 Pilot, Sync, Paging
Traffic Codes 8 Through 13
G
ps
,POWER
GAIN
(dB)
35
10
20
25
30
INPUT
RETURN
LOSS
(dB)
IRL,
ACPR
(dBc)
,DRAINh
EFFICIENCY
(%)
15
17
28
16
26
15
24
14
22
13
30
12
35
11
40
10
45
9
50
865
870
875
880
885
890
895
100
14.5
17.5
1
IDQ = 2200 mA
1900 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 3. Power Gain versus Output Power
G
ps
,POWER
GAIN
(dB)
VDD = 26 Vdc
f1 = 879.95 MHz, f2 = 880.05 MHz
10
17
16.5
16
15.5
15
1600 mA
1300 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Intermodulation Distortion versus
Output Power
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
100
90
10
1
7th Order
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion Products
versus Output Power
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
VDD = 26 Vdc
IDQ = 1900 mA
f1 = 879.95 MHz, f2 = 880.05
MHz
10
20
30
40
50
60
70
80
5th Order
3rd Order
100
10
22
1
0
60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Power Gain and Efficiency versus
Output Power
G
ps
,POWER
GAIN
(dB)
,DRAIN
EFFICIENCY
(%)
η
10
18
40
16
30
14
20
12
10
20
50
VDD = 26 Vdc
IDQ = 1900 mA
f = 880 MHz
η
Gps
100
70
20
1
IDQ = 1300 mA
1900 mA
VDD = 26 Vdc
f1 = 879.95 MHz, f2 = 880.05 MHz
1600 mA
2200 mA
30
40
50
60
10
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF9210R3 | 功能描述:射頻MOSFET電源晶體管 200W RF LDMOS NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9210R5 | 功能描述:射頻MOSFET電源晶體管 200W RF LDMOS NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF927T1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LOW NOISE HIGH FREQUENCY TRANSISTOR |
| MRF927T3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LOW NOISE HIGH FREQUENCY TRANSISTOR |
| MRF931 | 制造商:Motorola Inc 功能描述: |
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