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參數(shù)資料
| 型號(hào)： | MRF9210R |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-860C3, CASE 375G-04, 4 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 298K |
| 代理商： | MRF9210R |
2
RF Device Data
Freescale Semiconductor
MRF9210R3
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (1)
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0)
IDSS
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0)
IDSS
—
1
Adc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0)
IGSS
—
1
Adc
On Characteristics (1)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 330 Adc)
VGS(th)
1.5
2.8
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 800 mAdc)
VGS(Q)
2.5
3.3
4.5
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 2.2 Adc)
VDS(on)
—
0.2
0.4
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 6.7 Adc)
gfs
—
8.8
—
S
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
3.6
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) (2) Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier,
Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF
N-CDMA Common-Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 40 W Avg. N-CDMA, IDQ = 2 x 950 mA,
f = 880 MHz)
Gps
15.8
16.5
—
dB
N-CDMA Drain Efficiency
(VDD = 26 Vdc, Pout = 40 W Avg. N-CDMA, IDQ = 2 x 950 mA,
f = 880 MHz)
η
23
25.5
—
%
Adjacent Channel Power Ratio
(VDD = 26 Vdc, Pout = 40 W Avg. N-CDMA, IDQ = 2 x 950 mA,
f = 880 MHz; ACPR @ 40 W, 1.23 MHz Bandwidth,
750 kHz Channel Spacing)
ACPR
—
-46.2
-45
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 40 W Avg. N-CDMA, IDQ = 2 x 950 mA,
f = 880 MHz)
IRL
9
17.5
—
dB
N-CDMA Common-Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 40 W Avg. N-CDMA, IDQ = 2 x 950 mA,
f = 865 MHz and 895 MHz)
Gps
—
16.5
—
dB
N-CDMA Drain Efficiency
(VDD = 26 Vdc, Pout = 40 W Avg. N-CDMA, IDQ = 2 x 950 mA,
f = 865 MHz and 895 MHz)
η
—
25.5
—
%
Adjacent Channel Power Ratio
(VDD = 26 Vdc, Pout = 40 W Avg. N-CDMA, IDQ = 2 x 950 mA,
f = 865 MHz and 895 MHz; ACPR @ 40 W, 1.23 MHz Bandwidth,
750 kHz Channel Spacing)
ACPR
—
-47.5
—
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 40 W Avg. N-CDMA, IDQ = 2 x 950 mA,
f = 865 MHz and 895 MHz)
IRL
—
15
—
dB
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 40 W Avg. N-CDMA, IDQ = 2 x 950 mA,
f = 880 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
1. Each side of device measured separately.
2. Device measured in push-pull configuration.
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