參數(shù)資料
型號: MRF951
廠商: ADVANCED SEMICONDUCTOR INC
元件分類: 小信號晶體管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
文件頁數(shù): 1/1頁
文件大小: 23K
代理商: MRF951
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 0.1 mA
20
V
BVCEO
IC = 0.1 mA
10
V
ICBO
VCB = 10 V
0.1
A
IEBO
VEB = 1.0 V
0.1
A
hFE
VCE = 6.0 V
IC = 5.0 mA
50
200
---
Ccb
VCB = 10 V
f = 1.0 MHz
0.45
pF
GNF
VCE = 6.0 V
IC = 5.0 mA
f = 1.0 GHz
f = 2.0 GHz
14
9.0
dB
NF50
VCE = 6.0 V
IC = 5.0 mA
f = 1.0 GHz
1.9
2.8
dB
NPN SILICON RF TRANSISTOR
MRF951
DESCRIPTION:
The ASI
MRF951 is Designed for high
gain. Low noise small-signal amplifiers.
Applications up to 2.0 GHz.
FEATURES:
Low Noise Figure
High Gain
Omnigold Metalization System
MAXIMUM RATINGS
IC
100 mA
VCBO
20 V
VCEO
10 V
VEBO
1.5 V
PDISS
1.0 W @ TC = 25 °C
TJ
-65 °C to +150 °C
TSTG
-65 °C to +150 °C
θθθθ
JC
100 °C/W
PACKAGE STYLE
Dim. Are in mm
Leads 1 and 3 = Emitter
2 = Collector
4 = Base
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